器件物理研究了0.1微米通道长度薄膜SOI/CMOS IC和0.1微米基宽HBT MMIC的大信号瞬态性能和大信号功率放大性能

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.503366

C. Huang, Y.H. Yang, G. Lee, G.C. Feng, T.J. Chi

{"title":"器件物理研究了0.1微米通道长度薄膜SOI/CMOS IC和0.1微米基宽HBT MMIC的大信号瞬态性能和大信号功率放大性能","authors":"C. Huang, Y.H. Yang, G. Lee, G.C. Feng, T.J. Chi","doi":"10.1109/ICSICT.1995.503366","DOIUrl":null,"url":null,"abstract":"Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC's\",\"authors\":\"C. Huang, Y.H. Yang, G. Lee, G.C. Feng, T.J. Chi\",\"doi\":\"10.1109/ICSICT.1995.503366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

给出了0.1微米通道长度薄膜SOI/CMOS IC和0.1微米基宽HBT mmic的大信号瞬态性能和大信号功率放大的器件物理研究的初步结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC's

Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 4th International Conference on Solid-State and IC Technology

自引率

0.00%

发文量