Photovoltaic actions in MPS structure [Al(Au)/Si/p-Si]

Abstract

This communication gives the recent results about photovoltaic actions in a metal/porous silicon/p-type silicon (MPS) structure. The spectral response range is very wide from 350 nm to 1100 nm. The open circuit voltage increases linearly with decreasing of temperature, but has no longer a linear relationship with logarithm of the illuminated power density. These results can be explained on the basis of assuming that the metal/porous silicon (M/PS) Schottky junction plays a main role in the photovoltaic effects, while the PS/p-Si heterojunction impedes the carrier transport.