介绍了砷化镓单晶的空间生长

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.500169

L.Y. Lin, X. Zhong

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引用次数: 0

摘要

中国返回式卫星已经培育出掺te、掺si和半绝缘GaAs单晶三种类型的GaAs单晶。本文报道了材料的电学、光学、光电特性和结构特性等方面的研究结果。利用空间生长SI-GaAs单晶制备低噪声场效应晶体管，取得了令人感兴趣的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Introducing the space growth of GaAs single crystals

Three types of GaAs single crystals, i.e. Te-doped, Si-doped as well as semi-insulating GaAs (SI-GaAs) single crystals, have been grown in Chinese recoverable satellites. This paper reports the results of property investigations, including electrical, optical, opto-electrical properties and structural characteristics. The space-grown SI-GaAs single crystal is used for fabricating low noise FET devices, and interesting results are obtained.

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Proceedings of 4th International Conference on Solid-State and IC Technology

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