{"title":"Introducing the space growth of GaAs single crystals","authors":"L.Y. Lin, X. Zhong","doi":"10.1109/ICSICT.1995.500169","DOIUrl":null,"url":null,"abstract":"Three types of GaAs single crystals, i.e. Te-doped, Si-doped as well as semi-insulating GaAs (SI-GaAs) single crystals, have been grown in Chinese recoverable satellites. This paper reports the results of property investigations, including electrical, optical, opto-electrical properties and structural characteristics. The space-grown SI-GaAs single crystal is used for fabricating low noise FET devices, and interesting results are obtained.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.500169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Three types of GaAs single crystals, i.e. Te-doped, Si-doped as well as semi-insulating GaAs (SI-GaAs) single crystals, have been grown in Chinese recoverable satellites. This paper reports the results of property investigations, including electrical, optical, opto-electrical properties and structural characteristics. The space-grown SI-GaAs single crystal is used for fabricating low noise FET devices, and interesting results are obtained.