Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC's

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.503366

C. Huang, Y.H. Yang, G. Lee, G.C. Feng, T.J. Chi

引用次数: 0

Abstract

Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs.

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器件物理研究了0.1微米通道长度薄膜SOI/CMOS IC和0.1微米基宽HBT MMIC的大信号瞬态性能和大信号功率放大性能

给出了0.1微米通道长度薄膜SOI/CMOS IC和0.1微米基宽HBT mmic的大信号瞬态性能和大信号功率放大的器件物理研究的初步结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 4th International Conference on Solid-State and IC Technology

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