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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications Wi-Fi PA应用SiGe hbt射频击穿电压限制因素分析
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682457
Ajay Raman, V. Jain, Elanchezhian Veeramani, Beng Woon Lim, U. Raghunathan, Y. Ngu, A. Joseph
{"title":"Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications","authors":"Ajay Raman, V. Jain, Elanchezhian Veeramani, Beng Woon Lim, U. Raghunathan, Y. Ngu, A. Joseph","doi":"10.1109/BCICTS50416.2021.9682457","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682457","url":null,"abstract":"For the first time, we present a comprehensive study of the dependence of the RF breakdown voltage of a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) on the DC breakdown metrics, device size, geometry, bias conditions and temperature. We explore the RF breakdown voltage of a SiGe HBT based on the 4th generation GLOBALFOUNDRIES 350nm PA technology and show that the collector-base breakdown voltage with emitter open (BVCBO) is more important in determining the RF breakdown of the HBT than the collector-emitter breakdown voltage with base open (BVCEO). We also show that the RF breakdown voltage and the Safe Operating Area (SOA) of the device are strongly dependent on the device size, and that the thermal effects significantly impact the RF breakdown voltage of the device.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121899240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon Photonics Platform from Datacom to Sensing Applications 从数据通信到传感应用的硅光子学平台
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682461
F. Boeuf, Cyrille Barrera, I. Charlet, Michele Calvo, A. Fincato, S. Monfray, S. Guerber, S. Crémer, N. Vulliet, J. Carpentier, L. Maggi, D. Fowler, C. Jany, P. L. Maitre, M. Douix, R. Orobtchouk, D. Marris-Morini, L. Vivien
{"title":"Silicon Photonics Platform from Datacom to Sensing Applications","authors":"F. Boeuf, Cyrille Barrera, I. Charlet, Michele Calvo, A. Fincato, S. Monfray, S. Guerber, S. Crémer, N. Vulliet, J. Carpentier, L. Maggi, D. Fowler, C. Jany, P. L. Maitre, M. Douix, R. Orobtchouk, D. Marris-Morini, L. Vivien","doi":"10.1109/BCICTS50416.2021.9682461","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682461","url":null,"abstract":"In this paper we make a status review of the various applications of Silicon Photonics, focusing on capability of a versatile 300mm Silicon Photonics platform to address data-communication, 3D-sensing and bio-sensing applications.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121831959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Simple Technique to Estimate Surface Traps from DC Transfer Characteristics of GaN-Based HEMT 从gan基HEMT直流转移特性估计表面陷阱的一种简单技术
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682496
Sujan Sarkar, Ramdas P. Khade, N. Dasgupta, A. DasGupta
{"title":"A Simple Technique to Estimate Surface Traps from DC Transfer Characteristics of GaN-Based HEMT","authors":"Sujan Sarkar, Ramdas P. Khade, N. Dasgupta, A. DasGupta","doi":"10.1109/BCICTS50416.2021.9682496","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682496","url":null,"abstract":"This paper proposes a simple technique to estimate the surface traps in GaN-based HEMTs by applying a negative gate bias stress. The transfer characteristics of HEMTs were measured for drain voltages (VDS) varying from 2V to 10V in steps of 2V with gate bias stress of −8V. The stress time of the measurement was varied from Os to 300s in steps of 60s. For a particular VDS, as the stress time was increased, the off-state drain leakage current changed due to surface traps. Two different samples were characterized. In one sample with a significant amount of surface traps, the off-state drain leakage current de-creased with the stress time. In another sample with a negligible amount of surface traps, the off-state drain leakage current remained nearly constant. This simple measurement technique can identify surface traps present in GaN-based HEMTs. The results were corroborated through estimation of surface traps with special test structures.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130455434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile S/C/X/ ku波段，4分路，数字可控模拟FIR滤波器，带宽可重构，射频滤波配置文件
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682205
Moon-Kyu Cho, I. Song, N. Lourenco, A. Cardoso, C. Coen, William B. Hunter, D. Denison, J. Cressler
{"title":"A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile","authors":"Moon-Kyu Cho, I. Song, N. Lourenco, A. Cardoso, C. Coen, William B. Hunter, D. Denison, J. Cressler","doi":"10.1109/BCICTS50416.2021.9682205","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682205","url":null,"abstract":"A proposed wideband integrated 4-tap analog finite impulse response (AFIR) filter has been implemented in silicon germanium (SiGe) technology for use in direct-throughput of RF signals in the microwave and millimeter-wave spectrum. To simultaneously provide bandwidth and RF filtering profile tunability, a wideband coefficient/polarity control circuit and time delay elements are utilized. The proposed 4-tap AFIR filter consists of coefficient/polarity/tap control circuits with equalization, time delay elements, wideband Wilkinson power divider/combiners, a two-stage low-noise amplifier (LNA) with equal power distribution, and an active power combiner. The proposed AFIR filter addresses flat in-band response, low-pass filter (LPF), high-pass filter (HPF), and notch filter depending on coefficient and polarity control sets. To provide simple system configuration and a high integration level for a multi-tap AFIR system, all required coefficients, polarities, and taps are controlled by digital control units.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134507299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Single-Chip 25.3–28.0 GHz SiGe BiCMOS PLL with −134 dBc/Hz Phase Noise at 10 MHz Offset and −96 dBc Reference Spurs 单芯片25.3-28.0 GHz SiGe BiCMOS锁相环，10 MHz偏移时相位噪声为−134 dBc/Hz，参考杂散为−96 dBc
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682458
M. Hickle, Kevin Grout, C. Grens, G. Flewelling, S. E. Turner
{"title":"A Single-Chip 25.3–28.0 GHz SiGe BiCMOS PLL with −134 dBc/Hz Phase Noise at 10 MHz Offset and −96 dBc Reference Spurs","authors":"M. Hickle, Kevin Grout, C. Grens, G. Flewelling, S. E. Turner","doi":"10.1109/BCICTS50416.2021.9682458","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682458","url":null,"abstract":"This paper presents a 25.3–28.0 GHz integer-N PLL in a 90 nm SiGe BiCMOS process. The PLL heavily utilizes SiGe HBTs for high-speed and low-noise operation, featuring −96 dBc reference spurs and −97/−107/−134 dBc/Hz phase noise at 1 kHz / 1 MHz / 10 MHz offset. The PLL has 94 fs integrated jitter at a 26 GHz carrier frequency and draws 850 mW from a 3.3V supply for a jitter-power FOM of −231 dBc. The PLL has lower reference spurs and phase noise at 1 kHz and 10 MHz offsets compared to recently published mmW PLLs, making this PLL well-suited for high dynamic range transceiver applications.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129368816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-Speed TLP and ESD Characterization of ICs ic的高速TLP和ESD特性
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682498
K. Muhonen, E. Grund, R. Ashton
{"title":"High-Speed TLP and ESD Characterization of ICs","authors":"K. Muhonen, E. Grund, R. Ashton","doi":"10.1109/BCICTS50416.2021.9682498","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682498","url":null,"abstract":"Electrostatic discharge is always an area of concern in reliability and production of ICs. To design effective ESD clamps, knowing how the clamp turns on and operates during an ESD event is critical. This cannot be done with S-parameters or any other type of typical RF characterization. Transmission Line Pulsing, TLP, is a high-speed system that mimics an ESD event with a very short flat pulse (100 ns is typical). This allows in situ measurement of the voltage and current at the DUT during an ESD-like event. This paper will give an introduction into the theory (which is based on time domain reflection), configuration and uses of TLP. Different TLP configurations will be reviewed, and each configuration an IV curve for the DUT response is discussed. Calibration and correction will be explained which are done in the time domain. These provide the voltage and current references. The importance of the TLP load line will be discussed and its application to DUT characterization of turn-on and snap-back. Finally, characterization with pulses shorter than 10 ns, Very Fast TLP, are presented and its hurdles to accurate calibration.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124838723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology 一种10-130 GHz分布式功率放大器，实现2.6 THz GBW，峰值输出13.1 dBm P1dB，用于90nm SiGe HBT技术的超宽带应用
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682475
Oguz Kazan, Gabriel M. Rebeiz
{"title":"A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology","authors":"Oguz Kazan, Gabriel M. Rebeiz","doi":"10.1109/BCICTS50416.2021.9682475","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682475","url":null,"abstract":"This paper presents a 10-130 GHz ultra-wideband distributed power amplifier (DPA) with 2.6 THz gain-bandwidth product (GBW). The DPA is composed of 3 stages each with multiple cascode amplifier sections. The circuit is realized using 90 nm SiGe BiCMOS process having a 255 GHz fT HBT. The amplifier achieves small-signal gain of 18-23 dB at 10-30 GHz and monotonically increasing to the peak of 33 dB at 98 GHz. The return losses are better than 10 dB covering more than 140 GHz. The circuit has a peak OP1dB of 13.1 dBm at 22 GHz. To the best of authors’ knowledge, the proposed amplifier achieves the largest GBW in SiGe DPAs while providing relatively high power.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129287486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 6-bit 56-GSa/s DAC in 55 nm SiGe BiCMOS 55nm SiGe BiCMOS的6位56 gsa /s DAC
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682204
B. Moeneclaey, M. Verplaetse, H. Ramon, N. Singh, Haolin Li, J. V. Kerrebrouck, X. Yin, G. Torfs
{"title":"A 6-bit 56-GSa/s DAC in 55 nm SiGe BiCMOS","authors":"B. Moeneclaey, M. Verplaetse, H. Ramon, N. Singh, Haolin Li, J. V. Kerrebrouck, X. Yin, G. Torfs","doi":"10.1109/BCICTS50416.2021.9682204","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682204","url":null,"abstract":"We present a 6-bit 56-GSa/s digital-to-analog converter (DAC), implemented in 55 nm SiGe BiCMOS. It consumes 2.36 W of which 0.77 W is utilized in the DAC core. Experiments show an analog 3-dB bandwidth exceeding 28 GHz and an effective number of bits (ENOB) of 3.9. We demonstrate transmission of 112 Gb/s four-level pulse-amplitude modulation (PAM-4) and 168 Gb/s PAM-8 over a channel consisting of an electrical probe and 20 cm RF cables. With pre-equalization compensating the channel loss, we achieve a 0.59 Vpp signal swing.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126453235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications SiGe BiCMOS的未来:高性能毫米波应用的双极放大器
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682483
P. Magnée, D. Leenaerts, M. Heijden, T. Dinh, I. To, I. Brunets
{"title":"The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications","authors":"P. Magnée, D. Leenaerts, M. Heijden, T. Dinh, I. To, I. Brunets","doi":"10.1109/BCICTS50416.2021.9682483","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682483","url":null,"abstract":"Modern communication standards provide very high data rates, which put strict requirements on the technology that is being used. SiGe BiCMOS is still crucial for fulfilling specific functions in communication applications to enable these high data rates. SiGe enables Power Amplifiers with high efficiency for high linear output powers and Low Noise Amplifiers with both good noise performance and high linear gain.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132190181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Simple and Efficient Procedure for Identifying the Compressing Stage in Two-Stage Amplifiers 一种简单有效的两级放大器压缩级识别方法
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682499
Anton N. Atanasov, Waqam H. R. A. Mukhtar Ahmad, M. S. O. Alink, Frank E. van Vliet
{"title":"A Simple and Efficient Procedure for Identifying the Compressing Stage in Two-Stage Amplifiers","authors":"Anton N. Atanasov, Waqam H. R. A. Mukhtar Ahmad, M. S. O. Alink, Frank E. van Vliet","doi":"10.1109/BCICTS50416.2021.9682499","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682499","url":null,"abstract":"We propose a fast and simple method to accurately determine the compressing stage in a two-stage amplifier system based on reverse intermodulation and hot S-parameter measurements. The method uses no specialized hardware and needs little reconfiguration, simplifying the measurements. We demonstrate its validity over a broad range of amplifiers designed in various semiconductor technologies. This method is a very useful tool in understanding or debugging amplifier designs.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126844469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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