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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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SiGe HBTs with ${f_{T}/f_{max},sim,375/510GHz}$ Integrated in 45nm PDSOI CMOS SiGe HBTs与${f_{T}/f_{max},sim,375/510GHz}$集成在45nm PDSOI CMOS
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682454
J. Pekarik, V. Jain, C. Kenney, J. Holt, S. Khokale, S. Saroop, Jeffrey B. Johnson, K. Stein, V. Ontalus, Christopher Durcan, Mona Nafari, T. Nesheiwat, S. Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, A. Joseph
{"title":"SiGe HBTs with ${f_{T}/f_{max},sim,375/510GHz}$ Integrated in 45nm PDSOI CMOS","authors":"J. Pekarik, V. Jain, C. Kenney, J. Holt, S. Khokale, S. Saroop, Jeffrey B. Johnson, K. Stein, V. Ontalus, Christopher Durcan, Mona Nafari, T. Nesheiwat, S. Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, A. Joseph","doi":"10.1109/BCICTS50416.2021.9682454","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682454","url":null,"abstract":"A 45nm BiCMOS process, based on PDSOI CMOS, with SiGe HBT NPNs having ${f_{T}f_{max},=,375/510GHz}$ is presented. The bipolars are integrated on a PDSOI wafer in an epitaxial region above the handle wafer to avoid self-heating concerns. To our knowledge, this is the first time a high performance SiGe BiCMOS process has been demonstrated on a PDSOI wafer. In addition to the HBTs, the technology features high performance NFETs with ${f_{T}f_{MAX},=,265/330GHz}$ and PFETs with ${f_{T}f_{MAX},=,250/340GHz}$ enabling flexibility in circuit design. A full-flow demonstration PDK, digital standard cell and IO cell libraries have been released for experimental circuit design work. This work, funded under the DARPA T-MUSIC program, will address future extensions to higher HBT performance and more-advanced CMOS nodes.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126322113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 2-Stage C-Band 130W GaN MMIC Power Amplifier in an Overmold QFN Package 一种2级c波段130W GaN MMIC功率放大器，采用复模QFN封装
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682486
Bochao Zhao, C. Sanabria, Terry Hon
{"title":"A 2-Stage C-Band 130W GaN MMIC Power Amplifier in an Overmold QFN Package","authors":"Bochao Zhao, C. Sanabria, Terry Hon","doi":"10.1109/BCICTS50416.2021.9682486","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682486","url":null,"abstract":"This paper describes a new high power, PAE, and integration 2-stage C-band fully matched GaN (Gallium Nitride) HEMT (High Electron Mobility Transistors) FET MMIC (Monolithic Microwave Integrated Circuit) high power amplifier (HPA) QPA2309 in an overmold QFN (Quad Flat No-Lead) package. The MMIC uses Qorvo's high performance 50 V, 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are $7text{mm}times 7 text{mm}times 0.8text{mm}$. This PA delivers a typical 51.2 dBm (132.4 W) pulsed power, 51.6 % Power added efficiency (PAE) and 23.2 dB compressed gain.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126755206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
135GHz CMOS / LTCC MIMO Receiver Array Tile Modules 135GHz CMOS / LTCC MIMO接收机阵列模块
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682493
A. Farid, Ahmed S. H. Ahmed, Aditya Dhananjay, P. Skrimponis, S. Rangan, M. Rodwell
{"title":"135GHz CMOS / LTCC MIMO Receiver Array Tile Modules","authors":"A. Farid, Ahmed S. H. Ahmed, Aditya Dhananjay, P. Skrimponis, S. Rangan, M. Rodwell","doi":"10.1109/BCICTS50416.2021.9682493","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682493","url":null,"abstract":"We report 135GHz MIMO receiver array tile modules. The module integrate four or eight RF channels on an LTCC carrier, each channel having a 22nm SOI CMOS IC for RF‐‐baseband and a linear microstrip patch antenna array; DC, baseband IQ and LO reference signal connections are by printed circuit board connected to the LTCC carrier. Digital beamforming is demonstrated with the 8-element array, showing 12° 3-dB beam width and 56° angular steering range, and with the 4-element array, showing 12° 3-dB beam width and 20° angular steering range before the appearance of grating lobes. The 4-element arrays, in single-beam operation, shows −15.7 dB RMS error vector magnitude receiving 1.34Gb/s QPSK data, and shows −15.6dB error vector magnitude receiving 1.92Gb/s 16QAM data.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121757398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOS 基于130nm SiGe BiCMOS的40Gb/s多频带均衡线性重驱动器
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682495
Tong Liu, Yuanming Zhu, Anil Korkmaz, S. Delshadpour, S. Palermo
{"title":"A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOS","authors":"Tong Liu, Yuanming Zhu, Anil Korkmaz, S. Delshadpour, S. Palermo","doi":"10.1109/BCICTS50416.2021.9682495","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682495","url":null,"abstract":"A linear redriver circuit implements multi-band equalization techniques to efficiently compensate for high-frequency channel loss and extend high-speed wireline link reach. Input and output stage emitter-follower buffers with dual AC and DC paths provide programmable low-frequency peaking for channel skin effect, while a continuous-time linear equalizer (CTLE) utilizes RC degeneration in the input stage for mid-band peaking and a subsequent feedback structure contributes to additional high-frequency peaking to compensate for the additional dielectric loss effects. A variable-gain amplifier (VGA) stage provides up to 7.1dB tunable gain and utilizes negative capacitive loads for bandwidth extension. Input and output return loss of −11.0dB and −12.2dB is respectively achieved at 20GHz with input and output T-coil stages that distribute the ESD circuitry capacitance. Fabricated in a 130nm SiGe BiCMOS process, the redriver achieves 23.5dB max peaking at 20GHz and supports a 1Vppd linear output swing. Per-channel power consumption is 115.2mW from a 1.8V supply.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122684986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{max}$ and BVCE0 > 4.5 V 0.4-μm InP/InGaAs DHBT, 380 ghz ${f_{T}}$， > 600 ghz $f_{max}$， BVCE0 > 4.5 V
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682209
N. Davy, V. Nodjiadjim, M. Riet, C. Mismer, M. Deng, C. Mukherjee, J. Renaudier, C. Maneux
{"title":"0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{max}$ and BVCE0 > 4.5 V","authors":"N. Davy, V. Nodjiadjim, M. Riet, C. Mismer, M. Deng, C. Mukherjee, J. Renaudier, C. Maneux","doi":"10.1109/BCICTS50416.2021.9682209","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682209","url":null,"abstract":"We report on a 0.4-μιm emitter width composition-graded-base InP/InGaAs/InP DHBT technology featuring a current gain cutoff frequency (${f_{T}}$) and a maximum oscillation frequency ($f_{max}$) of 380 GHz and 605 GHz, respectively. The DHBTs demonstrate a maximum static current gain of 29 and a common-emitter breakdown voltage of 4.7 V. RF performances above 600 GHz were achieved through emitter size scaling and base contact width shrinking. Further investigations on measurements were performed by comparing three VNA calibration methods as well as through extraction of small-signal parameters over the 110 GHz measurement range.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126456454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Multi-mode Linear Optical Modulator Driver Circuit in 130 nm SiGe BiCMOS Technology 130 nm SiGe BiCMOS技术的多模线性光调制器驱动电路
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682494
A. Fatemi, G. Kahmen, A. Malignaggi
{"title":"A Multi-mode Linear Optical Modulator Driver Circuit in 130 nm SiGe BiCMOS Technology","authors":"A. Fatemi, G. Kahmen, A. Malignaggi","doi":"10.1109/BCICTS50416.2021.9682494","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682494","url":null,"abstract":"This paper presents a multi-mode linear driver operating as 64 Gbps non-return-to-zero to duobinary encoder, 55 GHz bandwidth transparent amplifier or 32 Gbps 1-Tap feed-forward equalizer. The driver, implemented in a 130 nm SiGe BiCMOS technology featuring fT/fMAX of 300/500 GHz, utilizes the traveling-wave topology to deliver a large output signal in both transparent mode, and superposing two consecutive input bits in duobinary mode, enhancing in this way the spectral efficiency. Moreover, the TWA cores provide the possibility to shape the signal in its equalizer operation mode. The present amplifier exhibits 24 dB gain with an output voltage swing up to 4 Vppd in duobinary mode. Measurement results indicate that the total harmonic distortion is better than 5.5% at the 1 dB compression point. To the best knowledge of the authors, this driver is the only one among the state-of-the-art linear large output swing drivers offering multi-mode functionality and, consequently, high system flexibility while preserving state-of-the-art performance.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123164274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs 高性能NPN SiGe hts在非状态模式下热载流子退化的物理特性
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682453
D. Ioannou, U. Raghunathan, D. Brochu, A. DiVergilio, V. Jain, J. Pekarik
{"title":"Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs","authors":"D. Ioannou, U. Raghunathan, D. Brochu, A. DiVergilio, V. Jain, J. Pekarik","doi":"10.1109/BCICTS50416.2021.9682453","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682453","url":null,"abstract":"We report on the hot carrier generation and device degradation mechanisms in high performance NPN SiGe HBTs under off-state mode operation. In contrast to the forward-active mode, where the emitter current has a central role in the device performance degradation processes, the low emitter electron injection under off-state is not sufficient to initiate impact ionization and is found to have no impact on the induced damage. Measurements and simulations suggest that the physics of hot carrier generation under off-state mode is driven by the band to band tunneling (BTBT) mechanism in the collector-base (CB) junction which has a positive temperature dependence. Despite the positive temperature dependence of the hot carrier generation rate, off-state hot carrier stress experiments covering a wide range of bias and temperature conditions induce base current shifts that exhibit a negative temperature dependence, indicating that device damage at high temperatures is limited by the reduction of carrier mean free path due to increased phonon scattering. Furthermore, device degradation is shown to correlate with the BTBT stress current and the CB breakdown voltage measured with the emitter open (BVCBO), highlighting the importance of a judicious optimization of the BVCBO parameter to enable a robust design for reliability methodology.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117263771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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