2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications 超高速应用的SiGe HBT BiCMOS工艺的建模和器件缩放研究进展

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682485

S. Phillips, E. Preisler, J. Zheng, S. Chaudhry, M. Racanelli, Markus Müller, M. Schröter, W. McArthur, D. Howard

{"title":"Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications","authors":"S. Phillips, E. Preisler, J. Zheng, S. Chaudhry, M. Racanelli, Markus Müller, M. Schröter, W. McArthur, D. Howard","doi":"10.1109/BCICTS50416.2021.9682485","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682485","url":null,"abstract":"A new generation of Tower Semiconductor's SBC18 SiGe BiCMOS process family is introduced, SBC18H5, that features a baseline high-speed SiGe HBT with a peak fT of 285 GHz and a peak fMAX of 310 GHz. The process enhancements necessary to improve the HBT from the previous technology node are described as well as the accompanying mm-wave components that are complementary for front-end module design. A detailed TCAD analysis of the 1D vertical profile highlights additional opportunities to enhance the high-frequency performance of the SiGe HBTs without altering the existing integration. Base epitaxial experimentation based on these simulated changes results in increasing the fT to 330 GHz and the fMAX to 345 GHz. This process enhancement has been released as a stand-alone process, SBC18EH5, which combines the core component offering of SBC18H5 with the vertical profile optimized SiGe HBTs. Pushing the limits of lateral scaling based on extended 200 mm wafer lithography capability, a measured fT/fMAX of 350/500 GHz is achieved and will be released as a new stand-alone sixth generation process named SBC18H6.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115481398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs 基于物理的鳍形GaN mishemt漏极电流紧凑模型

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682482

P. SruthiM., Ajay Shanbhag, A. Chakravorty, N. Dasgupta, A. DasGupta

{"title":"Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs","authors":"P. SruthiM., Ajay Shanbhag, A. Chakravorty, N. Dasgupta, A. DasGupta","doi":"10.1109/BCICTS50416.2021.9682482","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682482","url":null,"abstract":"In this paper, a physics based compact model for drain current in fin-shaped tri-gate GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. A positive threshold voltage shift is seen in these devices as a result of superior gate control of the channel by additional gates. The combined effect of top and side gates on channel charge density is studied with the help of TCAD and total current is modeled as the sum of two-dimensional electron gas (2DEG) and sidewall currents. The proposed fin-width dependent 2DEG current model is developed considering the effect of increased gate capacitance on threshold voltage of the device and side-gate depletion of 2DEG. The side-wall accumulation current is modeled to capture the sidewall channel conduction at higher gate voltages. The proposed model is completely analytical and does not require any iterations or fitting parameters in contrast to the available models discussed in the literature. Our model shows excellent agreement with state-of-the-art experimental data.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121549272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A 3.5-GHz 350-W Black-Box Doherty Amplifier Design Method Without Using Transistor Models 一种不使用晶体管模型的3.5 ghz 350 w黑盒多尔蒂放大器设计方法

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682459

N. Tawa, Paolo Enrico de Falco, Ohgami Kazuya, T. Barton, T. Kaneko

引用次数: 1

22FDSOI device towards RF and mmWave applications 22FDSOI器件面向射频和毫米波应用

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682480

Zhixing Zhao, S. Lehmann, W. L. Oo, A. Sahoo, S. Syed, Q. H. Le, D. K. Huynh, T. Chohan, D. Utess, Dominik Kleimaier, M. Wiatr, S. Kolodinski, J. Mazurier, J. Hoentschel, Andreas Knorr, N. Cahoon, S. Kneitz

引用次数: 5

Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework 基于高级建模框架的增强模式GaN HEMT结构输运特性比较

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682472

I. Berdalovic, M. Poljak, T. Suligoj

{"title":"Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework","authors":"I. Berdalovic, M. Poljak, T. Suligoj","doi":"10.1109/BCICTS50416.2021.9682472","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682472","url":null,"abstract":"The emergence of gallium nitride (GaN) as a popular material for power electronics applications due to its superior transport properties has seen the need for developing enhancement-mode GaN high electron mobility transistors (HEMTs). Several techniques have been used to achieve enhancement-mode, i.e. normally-off operation of AlGaN/GaN HEMT devices, but there are only a handful of studies on the transport properties of such devices. This paper uses an advanced framework for modeling the mobility of the 2D electron gas (2DEG) in GaN HEMT devices to assess the performance of different types of enhancement-mode HEMTs. Three types of enhancement-mode structures are compared: an AlGaN/GaN HEMT with a p-type GaN cap, a double heterostructure Al-GaN/GaN/AlGaN HEMT, and an AlGaN/GaN HEMT with a p-doped GaN buffer layer. The gate voltage dependence of the 2DEG mobility at different temperatures is analyzed for all three structures and the key scattering mechanisms are identified. It is concluded that at room temperature, when polar optical phonon (POP) scattering is dominant, the p-GaN cap structure exhibits the highest mobility due to weaker confinement of the 2DEG, while the other two structures show a ~15% lower mobility. At low temperatures and high gate voltages, this trend is reversed when interface roughness (IFR) scattering is the dominant mechanism, because of the different energy dependence of inter-subband IFR scattering rates in the three structures.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132445112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

From Transistor Parameters to PA Circuit Performance (Invited) 从晶体管参数到扩音电路性能(特邀)

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682210

P. Zampardi

引用次数: 1

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance 以电路性能为重点的SiGe HBTs的电热限制和器件退化

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682476

S. Frégonèse, C. Mukherjee, H. Rücker, P. Chevalier, G. Fischer, D. Céli, M. Deng, M. Couret, F. Marc, C. Maneux, T. Zimmer

引用次数: 1

10W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC 10W和30W, 32- 37ghz, ka波段GaN MMIC功率放大器

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682477

M. Litchfield, D. Dugas

引用次数: 2

Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs SiGe HBTs击穿机制的动力学行为

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682470

Harrison P. Lee, Jeffrey W. Teng, Nelson E. Sepulveda-Ramos, J. Cressler

引用次数: 0

Electric Field Engineering in Graded-Channel GaN-Based HEMTs 梯度沟道gan基hemt的电场工程

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682456

N. Venkatesan, J. Moon, P. Fay

{"title":"Electric Field Engineering in Graded-Channel GaN-Based HEMTs","authors":"N. Venkatesan, J. Moon, P. Fay","doi":"10.1109/BCICTS50416.2021.9682456","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682456","url":null,"abstract":"AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent candidates for high power and low-noise applications from RF through the millimeter wave. However, output power scaling in conventional device designs has proven challenging, especially at high frequencies. As a design alternative, graded-channel HEMTs have shown improved DC and RF performance due to the design flexibility that enables tailoring the transconductance (gm) and device capacitances, while maintaining high speed. Experimentally, graded-channel devices have also demonstrated improved output power scaling without the need for field plates, as well as higher speed and lower noise at low current densities, compared to conventional HEMTs. To understand these results, we report a detailed study of graded-channel HEMTs. We find that the use of a graded-channel structure enables engineering of not only the charge distribution (which controls the gm and capacitances) but also the lateral electric field profile. In contrast to abrupt AlGaN/GaN HEMTs which traditionally use field plates to minimize the surface electric fields in the gate-drain region, graded channel HEMTs can achieve significantly reduced electric fields through channel engineering. This makes them promising for high performance millimeter-wave applications.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134350782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3