Electric Field Engineering in Graded-Channel GaN-Based HEMTs

N. Venkatesan, J. Moon, P. Fay
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引用次数: 3

Abstract

AlGaN/GaN based high electron mobility transistors (HEMTs) are excellent candidates for high power and low-noise applications from RF through the millimeter wave. However, output power scaling in conventional device designs has proven challenging, especially at high frequencies. As a design alternative, graded-channel HEMTs have shown improved DC and RF performance due to the design flexibility that enables tailoring the transconductance (gm) and device capacitances, while maintaining high speed. Experimentally, graded-channel devices have also demonstrated improved output power scaling without the need for field plates, as well as higher speed and lower noise at low current densities, compared to conventional HEMTs. To understand these results, we report a detailed study of graded-channel HEMTs. We find that the use of a graded-channel structure enables engineering of not only the charge distribution (which controls the gm and capacitances) but also the lateral electric field profile. In contrast to abrupt AlGaN/GaN HEMTs which traditionally use field plates to minimize the surface electric fields in the gate-drain region, graded channel HEMTs can achieve significantly reduced electric fields through channel engineering. This makes them promising for high performance millimeter-wave applications.
梯度沟道gan基hemt的电场工程
基于AlGaN/GaN的高电子迁移率晶体管(hemt)是射频到毫米波高功率和低噪声应用的优秀候选者。然而,传统器件设计中的输出功率缩放已被证明具有挑战性,特别是在高频下。作为一种设计替代方案,由于设计灵活性,分级通道hemt可以在保持高速的同时定制跨导(gm)和器件电容,因此显示出更好的直流和射频性能。实验表明,与传统hemt相比,梯度通道器件在不需要场极板的情况下也能改善输出功率缩放,并且在低电流密度下具有更高的速度和更低的噪声。为了理解这些结果,我们报告了对分级通道hemt的详细研究。我们发现,梯度通道结构的使用不仅可以控制电荷分布(控制gm和电容),还可以控制侧向电场分布。与传统上使用场板最小化栅极-漏极区域表面电场的突变型AlGaN/GaN hemt不同,梯度沟道hemt可以通过沟道工程实现电场的显著减小。这使得它们有望用于高性能毫米波应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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