{"title":"10W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC","authors":"M. Litchfield, D. Dugas","doi":"10.1109/BCICTS50416.2021.9682477","DOIUrl":null,"url":null,"abstract":"The design and measured performance of two high power GaN MMIC PAs operating over 17% bandwidth in the Ka-Band are presented. The two designs achieve 10W and 30W of output power from 32 GHz to 37 GHz with a PAE greater than 20% when operating at 24V. The PAE of the 30W PA can be increased to nearly 30% when the drain voltage is decreased down to 15V. Comparisons of measured performance for the larger MMIC are made at 15V, 20V, and 24V drain voltage, demonstrating a wide range of efficient operation from 32 GHz to 37 GHz.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS50416.2021.9682477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The design and measured performance of two high power GaN MMIC PAs operating over 17% bandwidth in the Ka-Band are presented. The two designs achieve 10W and 30W of output power from 32 GHz to 37 GHz with a PAE greater than 20% when operating at 24V. The PAE of the 30W PA can be increased to nearly 30% when the drain voltage is decreased down to 15V. Comparisons of measured performance for the larger MMIC are made at 15V, 20V, and 24V drain voltage, demonstrating a wide range of efficient operation from 32 GHz to 37 GHz.