10W和30W, 32- 37ghz, ka波段GaN MMIC功率放大器

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682477

M. Litchfield, D. Dugas

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引用次数: 2

摘要

介绍了两种高功率GaN MMIC PAs的设计和性能测试，工作在ka波段的带宽超过17%。这两种设计在32ghz到37ghz范围内实现了10W和30W的输出功率，在24V工作时PAE大于20%。当漏极电压降至15V时，30W PA的PAE可提高到近30%。在15V、20V和24V漏极电压下，比较了较大的MMIC的测量性能，显示了32 GHz到37 GHz范围内的高效工作。

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10W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiC

The design and measured performance of two high power GaN MMIC PAs operating over 17% bandwidth in the Ka-Band are presented. The two designs achieve 10W and 30W of output power from 32 GHz to 37 GHz with a PAE greater than 20% when operating at 24V. The PAE of the 30W PA can be increased to nearly 30% when the drain voltage is decreased down to 15V. Comparisons of measured performance for the larger MMIC are made at 15V, 20V, and 24V drain voltage, demonstrating a wide range of efficient operation from 32 GHz to 37 GHz.

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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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