Zhixing Zhao, S. Lehmann, W. L. Oo, A. Sahoo, S. Syed, Q. H. Le, D. K. Huynh, T. Chohan, D. Utess, Dominik Kleimaier, M. Wiatr, S. Kolodinski, J. Mazurier, J. Hoentschel, Andreas Knorr, N. Cahoon, S. Kneitz
{"title":"22FDSOI器件面向射频和毫米波应用","authors":"Zhixing Zhao, S. Lehmann, W. L. Oo, A. Sahoo, S. Syed, Q. H. Le, D. K. Huynh, T. Chohan, D. Utess, Dominik Kleimaier, M. Wiatr, S. Kolodinski, J. Mazurier, J. Hoentschel, Andreas Knorr, N. Cahoon, S. Kneitz","doi":"10.1109/BCICTS50416.2021.9682480","DOIUrl":null,"url":null,"abstract":"This paper presents 22FDSOI device RF performance figure of merit dependencies on the design parameters, such as gate length, width per finger, number of fingers, centerline poly pitch, as well as the vertical gate repetition. With a proper design parameters combination, the device can achieve as high as 413 GHz of $f_{MAX}$. As a circuit demonstration, a 2-stage 2-stack power amplifier achieves an output power of 20.2 dBm and 32 % peak PAE at 28 GHz.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"22FDSOI device towards RF and mmWave applications\",\"authors\":\"Zhixing Zhao, S. Lehmann, W. L. Oo, A. Sahoo, S. Syed, Q. H. Le, D. K. Huynh, T. Chohan, D. Utess, Dominik Kleimaier, M. Wiatr, S. Kolodinski, J. Mazurier, J. Hoentschel, Andreas Knorr, N. Cahoon, S. Kneitz\",\"doi\":\"10.1109/BCICTS50416.2021.9682480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents 22FDSOI device RF performance figure of merit dependencies on the design parameters, such as gate length, width per finger, number of fingers, centerline poly pitch, as well as the vertical gate repetition. With a proper design parameters combination, the device can achieve as high as 413 GHz of $f_{MAX}$. As a circuit demonstration, a 2-stage 2-stack power amplifier achieves an output power of 20.2 dBm and 32 % peak PAE at 28 GHz.\",\"PeriodicalId\":284660,\"journal\":{\"name\":\"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS50416.2021.9682480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS50416.2021.9682480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents 22FDSOI device RF performance figure of merit dependencies on the design parameters, such as gate length, width per finger, number of fingers, centerline poly pitch, as well as the vertical gate repetition. With a proper design parameters combination, the device can achieve as high as 413 GHz of $f_{MAX}$. As a circuit demonstration, a 2-stage 2-stack power amplifier achieves an output power of 20.2 dBm and 32 % peak PAE at 28 GHz.
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