一种2级c波段130W GaN MMIC功率放大器，采用复模QFN封装

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682486

Bochao Zhao, C. Sanabria, Terry Hon

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引用次数: 0

摘要

本文介绍了一种新的高功率，PAE，集成2级c波段完全匹配GaN(氮化镓)HEMT(高电子迁移率晶体管)FET MMIC(单片微波集成电路)高功率放大器(HPA) QPA2309，采用复模QFN封装。MMIC采用Qorvo高性能50 V, 0.25 um, GaN-on-SiC工艺技术。完整的PA模块的尺寸为$7\text{mm}\乘以7\text{mm}\乘以0.8\text{mm}$。该放大器提供典型的51.2 dBm (132.4 W)脉冲功率，51.6%的功率附加效率(PAE)和23.2 dB压缩增益。

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A 2-Stage C-Band 130W GaN MMIC Power Amplifier in an Overmold QFN Package

This paper describes a new high power, PAE, and integration 2-stage C-band fully matched GaN (Gallium Nitride) HEMT (High Electron Mobility Transistors) FET MMIC (Monolithic Microwave Integrated Circuit) high power amplifier (HPA) QPA2309 in an overmold QFN (Quad Flat No-Lead) package. The MMIC uses Qorvo's high performance 50 V, 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are $7\text{mm}\times 7 \text{mm}\times 0.8\text{mm}$. This PA delivers a typical 51.2 dBm (132.4 W) pulsed power, 51.6 % Power added efficiency (PAE) and 23.2 dB compressed gain.

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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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