2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第5页

InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design InP高达500 GHz的DHBT特性和面向太赫兹电路设计的紧凑模型验证

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682466

M. Deng, C. Mukherjee, N. Davy, V. Nodjiadjim, M. Riet, C. Mismer, J. Renaudier, M. D. Matos, C. Maneux

引用次数: 2

GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications 非线性微波和射频应用的GaN和GaAs HEMT通道电流模型

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682497

A. Parker

引用次数: 1

Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications 光通信用0.5 μm InP dhbt中3-Vppd 90-GBaud / 110- ghz带宽线性驱动器的设计、建模与表征

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682463

R. Hersent, T. Johansen, V. Nodjiadjim, F. Jorge, B. Duval, F. Blache, M. Riet, C. Mismer, A. Konczykowska

引用次数: 8

Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs MIMO雷达mmic中两种SiGe d频带八倍器的频谱纯度比较

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682491

J. Romstadt, H. Papurcu, Ahmad Zaben, Steffen Hansen, K. Aufinger, N. Pohl

{"title":"Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICs","authors":"J. Romstadt, H. Papurcu, Ahmad Zaben, Steffen Hansen, K. Aufinger, N. Pohl","doi":"10.1109/BCICTS50416.2021.9682491","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682491","url":null,"abstract":"This paper presents and compares the design and measurement results of two D-Band MIMO radar IC versions regarding their transmit paths in Infineon's $0.13 mu mathrm{m}$ SiGe BiCMOS technology B11HFC. Each MMIC is mounted on a testing PCB where a differential feeding structure is connected to a D-Band rectangular waveguide (RWG). Every MMIC has four transmit paths, which generate and drive the D-Band signals, and four receive paths. These signals result from frequency multiplication with octuplers that consist of bootstrapped frequency doublers, distribution networks, filters, and PAs. Due to minor changes to components at the beginning of the octupler chain, the second MMIC achieves a better spectral purity of the output signal. At the center frequency, the harmonic rejection increased by more than 13 dB with respect to unwanted frequency components in the D-Band. Overall, both versions have a measured 3 dB bandwidth of 37 GHz/31 GHz with a peak output power of −7.4 dBm/−4.7 dBm and a center frequency of 132.5 GHz/134.5 GHz.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127093230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Modulator Technologies for Intra-Datacenter Optical Interconnects Beyond 1Tbps 超过1Tbps的数据中心内光互连调制器技术

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682481

M. Sotoodeh, R. Urata, Xiang Zhou, L. Verslegers, Hong Liu

引用次数: 0

An Over 130-GHz-Bandwidth InP-DHBT Baseband Amplifier Module 一种超过130 ghz带宽的InP-DHBT基带放大模块

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682479

Teruo Jyo, M. Nagatani, M. Mutoh, Y. Shiratori, H. Wakita, Hiroyuki Takahashi

引用次数: 6

Charge Trapping in GaN Power Transistors: Challenges and Perspectives 氮化镓功率晶体管的电荷俘获:挑战与展望

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682455

M. Meneghini, N. Modolo, A. Nardo, C. D. Santi, Andrea Minetto, Luca Sayadi, C. Koller, S. Sicre, G. Prechtl, G. Meneghesso, E. Zanoni

{"title":"Charge Trapping in GaN Power Transistors: Challenges and Perspectives","authors":"M. Meneghini, N. Modolo, A. Nardo, C. D. Santi, Andrea Minetto, Luca Sayadi, C. Koller, S. Sicre, G. Prechtl, G. Meneghesso, E. Zanoni","doi":"10.1109/BCICTS50416.2021.9682455","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682455","url":null,"abstract":"Over the past decade, gallium nitride has emerged as an excellent semiconductor for the fabrication of power devices, to be used in energy conversion systems and switching-mode power converters. GaN and its alloys have a high breakdown field, a high saturation velocity and a wide energy gap, thus being suitable for high temperature and high voltage operation. The use of large-size silicon substrates allows large-wafer processing, with positive impact on cost reduction and yield. Further advantages will come from monolithic integration, that allows for the fabrication of fast and compact integrated circuits, all based on gallium nitride. Such integrated circuits will enable compact and high-frequency converter design, and will contribute to making gallium nitride a ubiquitous technology. This paper summarizes the most relevant properties of gallium nitride and related transistors, and describes the main challenges related to charge trapping in GaN HEMTs. Specific attention is given to the dynamic-on resistance process and to the hot-electron trapping phenomena, that have been recently investigated with the aim of ensuring reliable and high-frequency operation.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124086204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits 射频电路中高压单发射极复用水平电流双极晶体管的电势

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682490

J. Žilak, Željko Osrečki, M. Koričić, F. Bogdanović, T. Suligoj

{"title":"Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits","authors":"J. Žilak, Željko Osrečki, M. Koričić, F. Bogdanović, T. Suligoj","doi":"10.1109/BCICTS50416.2021.9682490","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682490","url":null,"abstract":"High-voltage single-emitter (HV SE) Horizontal Current Bipolar Transistor (HCBT) with CMOS $p$-well RESURF region is analyzed with respect to its utilization in RF circuits. If compared to the high-speed (HS) HCBT, it retains the high-frequency characteristics to a certain extent due to the reduced base-collector capacitance by the full depletion of $n$-collector region, which is also accompanied by the breakdown voltage increase (e.g., BVCEO from 3.4 V to 10.5 V). The minimum noise figure $NF_{min}$ of 1.2 dB at 0.9 GHz and 1.54 dB at 2.4 GHz is reported, which is by about 0.2 dB higher than in HS HCBT. Basically, the same linear operating area at low-voltage and high-current regions as in HS HCBT is achieved by transistor area increase, which is relevant for the Class-A power amplifiers. The examined device exhibits maximum output power of 19.3 dBm and gain of 17.3 dB in PldB at 0.9 GHz, $I_{C}=44.4 text{mA}$ and $V_{text{CE}}$ as high as 8 V. Therefore, the HV SE HCBT is shown to be suitable for the sub-5 GHz RF circuits, offering operation at higher $VCE$ attractive for high-voltage applications such as access points.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122821142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of Stacked-CNTFET Structures for High-performance Applications 多层cntfet结构在高性能应用中的评价

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682469

Bo-Jung Peng, S. Mothes, M. Annamalai, M. Schröter

引用次数: 0

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs 基于负载-拉的SiGe HBTs大信号射频可靠性实验研究

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682473

Christoph Weimer, P. Sakalas, Markus Müller, G. Fischer, M. Schröter

引用次数: 6