InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design

Abstract

We report on-wafer characterization results up to 500 GHz on a 0.4×5 μm2 InP/InGaAs DHBT. The measurements were performed using an on-wafer Thru-Reflect-Line (TRL) calibration kit especially developed in this technology. The resulting measurements allowed to validate both the RF performance of the 0.4-μm InP/InGaAs DHBT fabricated by III-V Lab, featuring 390/600 GHz ${f_{T}f_{{\max}}}$, and the HiCuM compact model towards future circuit design at submillimeter-wave frequencies thanks to 90% typical yield reached in this technology.