光通信用0.5 μm InP dhbt中3-Vppd 90-GBaud / 110- ghz带宽线性驱动器的设计、建模与表征

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682463

R. Hersent, T. Johansen, V. Nodjiadjim, F. Jorge, B. Duval, F. Blache, M. Riet, C. Mismer, A. Konczykowska

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引用次数: 8

摘要

在本文中，我们介绍了一个3-Vppd线性输出摆幅90 gbd PAM-4调制器驱动器的建模、设计和表征，该驱动器采用III-V实验室内部的0.5 μm InP DHBT技术(380/520 ghz ${f_{T}/f_{\max}}}$， 4.2 v ${BV_{\text{CE0}}}$)实现。该驱动器在95 GHz时具有13db均衡能力，带宽远高于110 GHz。它的功耗为0.67 w，从而产生1.5 gbd的FoM，输出信号质量良好。据我们所知，这款线性驱动器在当前最先进的技术中显示出最高的>64 GBd PAM-4性能，没有DSP也没有预先强调。我们还报道了一种新开发的0.5 μm InP DHBT技术及其使用小值外部寄生em仿真提取的建模，在电路级显示出更高的高频预测精度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications

In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's in-house 0.5-μm InP DHBT technology (380/520-GHz ${f_{T}/f_{{\max}}}$, 4.2-V ${BV_{\text{CE0}}}$). The driver exhibits 13-dB equalisation capabilities at 95 GHz with a bandwidth well beyond 110 GHz. It features a 0.67-W power consumption, resulting in a 1.5-GBd FoM with good output signal quality. To the best of our knowledge this linear driver shows the highest >64 GBd PAM-4 performance in current state-of-the-art, without DSP nor pre-emphasis. We also report on a newly developed 0.5-μm InP DHBT technology and its modelling using small-value external parasitic EM-simulation extraction, showing improved high-frequency prediction accuracy at circuit level.

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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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