InP高达500 GHz的DHBT特性和面向太赫兹电路设计的紧凑模型验证

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682466

M. Deng, C. Mukherjee, N. Davy, V. Nodjiadjim, M. Riet, C. Mismer, J. Renaudier, M. D. Matos, C. Maneux

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引用次数: 2

摘要

我们报告了在0.4×5 μm2 InP/InGaAs DHBT上高达500 GHz的晶圆上表征结果。测量是使用该技术专门开发的晶圆上透反射线(TRL)校准套件进行的。测量结果验证了III-V实验室制造的0.4 μm InP/InGaAs DHBT的射频性能，该DHBT具有390/600 GHz ${f_{T}f_{\max}}}$，并且由于该技术达到90%的典型产率，因此可以为未来的亚毫米波频率电路设计提供HiCuM紧凑模型。

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InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design

We report on-wafer characterization results up to 500 GHz on a 0.4×5 μm2 InP/InGaAs DHBT. The measurements were performed using an on-wafer Thru-Reflect-Line (TRL) calibration kit especially developed in this technology. The resulting measurements allowed to validate both the RF performance of the 0.4-μm InP/InGaAs DHBT fabricated by III-V Lab, featuring 390/600 GHz ${f_{T}f_{{\max}}}$, and the HiCuM compact model towards future circuit design at submillimeter-wave frequencies thanks to 90% typical yield reached in this technology.

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来源期刊

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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