J. Žilak, Željko Osrečki, M. Koričić, F. Bogdanović, T. Suligoj
{"title":"Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits","authors":"J. Žilak, Željko Osrečki, M. Koričić, F. Bogdanović, T. Suligoj","doi":"10.1109/BCICTS50416.2021.9682490","DOIUrl":null,"url":null,"abstract":"High-voltage single-emitter (HV SE) Horizontal Current Bipolar Transistor (HCBT) with CMOS $p$-well RESURF region is analyzed with respect to its utilization in RF circuits. If compared to the high-speed (HS) HCBT, it retains the high-frequency characteristics to a certain extent due to the reduced base-collector capacitance by the full depletion of $n$-collector region, which is also accompanied by the breakdown voltage increase (e.g., BVCEO from 3.4 V to 10.5 V). The minimum noise figure $NF_{min}$ of 1.2 dB at 0.9 GHz and 1.54 dB at 2.4 GHz is reported, which is by about 0.2 dB higher than in HS HCBT. Basically, the same linear operating area at low-voltage and high-current regions as in HS HCBT is achieved by transistor area increase, which is relevant for the Class-A power amplifiers. The examined device exhibits maximum output power of 19.3 dBm and gain of 17.3 dB in PldB at 0.9 GHz, $I_{C}=44.4\\ \\text{mA}$ and $V_{\\text{CE}}$ as high as 8 V. Therefore, the HV SE HCBT is shown to be suitable for the sub-5 GHz RF circuits, offering operation at higher $VCE$ attractive for high-voltage applications such as access points.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS50416.2021.9682490","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High-voltage single-emitter (HV SE) Horizontal Current Bipolar Transistor (HCBT) with CMOS $p$-well RESURF region is analyzed with respect to its utilization in RF circuits. If compared to the high-speed (HS) HCBT, it retains the high-frequency characteristics to a certain extent due to the reduced base-collector capacitance by the full depletion of $n$-collector region, which is also accompanied by the breakdown voltage increase (e.g., BVCEO from 3.4 V to 10.5 V). The minimum noise figure $NF_{min}$ of 1.2 dB at 0.9 GHz and 1.54 dB at 2.4 GHz is reported, which is by about 0.2 dB higher than in HS HCBT. Basically, the same linear operating area at low-voltage and high-current regions as in HS HCBT is achieved by transistor area increase, which is relevant for the Class-A power amplifiers. The examined device exhibits maximum output power of 19.3 dBm and gain of 17.3 dB in PldB at 0.9 GHz, $I_{C}=44.4\ \text{mA}$ and $V_{\text{CE}}$ as high as 8 V. Therefore, the HV SE HCBT is shown to be suitable for the sub-5 GHz RF circuits, offering operation at higher $VCE$ attractive for high-voltage applications such as access points.