GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications

Abstract

An explicit drain current model accounts for channel charge and electron velocity in GaN and GaAs HEMTs. Saturated current is shown to be dependent on the bulk potential gradient and correct determination of mobility and peak velocity potential. As an advancement over existing approaches, the model produces an improved prediction of linearity and temperature dependence in a compact formulation. It offers superior high-order linearity prediction critical for wireless applications.