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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Compact Design of Passive Networks in RF and Millimeter-Wave Integrated Circuits (invited) 射频与毫米波集成电路中无源网络的紧凑型设计(特邀)
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682208
Xuanyi Dong, A. Weisshaar
{"title":"Compact Design of Passive Networks in RF and Millimeter-Wave Integrated Circuits (invited)","authors":"Xuanyi Dong, A. Weisshaar","doi":"10.1109/BCICTS50416.2021.9682208","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682208","url":null,"abstract":"This paper reviews a general layout methodology for compact integrated inductor design. The compact layout methodology enables uncoupled inductor layouts with compact footprint without degrading individual inductor performance. The design methodology is demonstrated on two application examples of compact output matching network (OMN) redesign for a commercial 28 GHz LNA and 5.8 GHz PA.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114066480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 268-325 GHz 5.2 dBm Psat Frequency Doubler Using Transformer-Based Mode Separation in SiGe BiCMOS Technology 基于SiGe BiCMOS技术的基于变压器模式分离的268-325 GHz 5.2 dBm Psat倍频器
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682474
Sascha Breun, Albert-Marcel Schrotz, M. Dietz, V. Issakov, R. Weigel
{"title":"A 268-325 GHz 5.2 dBm Psat Frequency Doubler Using Transformer-Based Mode Separation in SiGe BiCMOS Technology","authors":"Sascha Breun, Albert-Marcel Schrotz, M. Dietz, V. Issakov, R. Weigel","doi":"10.1109/BCICTS50416.2021.9682474","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682474","url":null,"abstract":"This paper presents a 268-325 GHz high output power, transformer-based frequency doubler for radar applications achieving 5.2dBm saturated power (Psat) at 304 GHz and 57 GHz Psat 3 dB-bandwidth. We propose a circuit concept based on a modified octagonal transformer device that is used to efficiently extract the second harmonic from a differential power amplifier (PA), operating at half the output frequency. The device exploits the fact that the second harmonic is present in common-mode at the PA output, whereas the fundamental harmonic remains in differential mode. Hence, the transformer device enables the extraction of the second harmonic by the means of mode separation and is applied as output matching network, simultaneously. Driven by a two-stage, cascode-based wideband driving stage, it provides a Psat exceeding 0 dBm over a bandwidth of 85 GHz from 251-336 GHz. A peak conversion gain of 20 dB is achieved at 304 GHz and remains above 10 dB for operation at maximum output power. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ${f_{t}/f_{max}}$ of 250 GHz / 370 GHz and consumes 505 mW from a 3.65 V supply. To the best of the authors knowledge, the power of 5.2 dBm is the highest reported in that frequency range using SiGe technology.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114796688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Silicon Photonic Mach-Zehnder Modulator Driver for 800+Gb/s Optical Links 用于800+Gb/s光链路的硅光子马赫-曾德尔调制器驱动器
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682484
Tie Sun, J. Rogers, Mike Rogers, I. Dedic, M. Parvizi, Ying Zhao, Li Chen, Long Chen, R. Aroca
{"title":"Silicon Photonic Mach-Zehnder Modulator Driver for 800+Gb/s Optical Links","authors":"Tie Sun, J. Rogers, Mike Rogers, I. Dedic, M. Parvizi, Ying Zhao, Li Chen, Long Chen, R. Aroca","doi":"10.1109/BCICTS50416.2021.9682484","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682484","url":null,"abstract":"High-Baud rate Si-photonic based optical systems will enable the next generation of low power optical modules for datacenter and long-reach applications. In this paper the importance of high-speed interconnect between DAC-Driver and modulator is discussed. A new solution to reduce the interconnect loss in both transmitter and receiver path is proposed. Furthermore, a new low power driver architecture is proposed which can deliver more than 4Vppd to a Si-Photonic Mach-Zehnder modulator with more than 70GHz of electrical bandwidth. The total harmonic distortion (THD) performance of the driver is measured using $100Omega$ differential load and is better than 5% for output swings of <4Vppd at 1GHz and 5GHz. Optical eye diagram is provided and BER measurements indicate BER of better than 3e-4 for 90GBaud 168Gb/s PAM4 transmission.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115900662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology 模拟2:1多路复用器，带宽超过110 GHz，采用SiGe BiCMOS技术
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682492
T. Tannert, M. Grözing, M. Berroth, C. Schmidt, J. Choi, C. Caspar, J. Schostak, V. Jungnickel, R. Freund, H. Rücker
{"title":"Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology","authors":"T. Tannert, M. Grözing, M. Berroth, C. Schmidt, J. Choi, C. Caspar, J. Schostak, V. Jungnickel, R. Freund, H. Rücker","doi":"10.1109/BCICTS50416.2021.9682492","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682492","url":null,"abstract":"We report on a 2:1 analog multiplexer (AMUX) circuit in 130-nm SiGe BiCMOS technology. The technology offers HBTs with peak fT of 470 GHz and fmax of 650 GHz. S-parameter measurements of the AMUX IC show a significant leap in bandwidth compared to the circuit in the previous technology generation. The linear signal path offers a 3-dB-bandwith beyond 110 GHz, while the limiting clock path has 85 GHz 3-dB-bandwidth. With this circuit two digital-to-analog converters (DACs) can be time-interleaved, to generate multi-level signals far beyond 100 GBaud with both high bandwidth and linearity.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116946031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Opportunities for Millemeter-Wave Wireless Technologies Using Metasurfaces 使用元表面的毫米波无线技术的机遇
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682488
A. Alú
{"title":"Opportunities for Millemeter-Wave Wireless Technologies Using Metasurfaces","authors":"A. Alú","doi":"10.1109/BCICTS50416.2021.9682488","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682488","url":null,"abstract":"In this talk we review our recent progress on the opportunities enabled by metamaterials and metasurfaces for mm-wave wireless technologies. We will discuss our recent work in the context of time modulation and spatio-temporal variations in metasurfaces, with particular attention to the tools they offer to overcome the common limitations of passive, linear, time-invariant systems. More broadly, we discuss how metasurfaces integrated with active, nonlinear and time-varying elements may disruptively advance mm-wave wireless communication systems, offering new tools for reconfigurable intelligent surfaces that can tailor the incoming spectrum, and reconfigure at will the communications channels with large flexibility. We envision new programmable multifunctional surfaces with ad-hoc communication protocols for new opportunities in mm-wave technologies.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123546611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs 先进SiGe hbt模拟中的增强漂移扩散输运
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682487
M. Müller, M. Schröter, C. Jungemann, Christoph Weimer
{"title":"Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs","authors":"M. Müller, M. Schröter, C. Jungemann, Christoph Weimer","doi":"10.1109/BCICTS50416.2021.9682487","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682487","url":null,"abstract":"A novel formulation of one-dimensional drift-diffusiontransport that captures non-local efforts is derived. Theapplication of the formulation to two advanced SiGe HBTstructures is presented. Simulations using the new formulationare shown to agree well with results from the Boltzmanntransport equation and measurement data. Due to its numericalefficiency and simplicity, the proposed formulation is useful fortechnology optimization and compact model development.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126173983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An 8.2-pJ/bit, 56 Gb/s Traveling-wave Modulator Driver with Large Reverse Terminations 一个8.2 pj /bit, 56gb /s的大反向终端行波调制器驱动
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682462
Hector Andrade, Aaron Maharry, Luis A. Valenzuela, Navid Hosseinzadeh, C. Schow, J. Buckwalter
{"title":"An 8.2-pJ/bit, 56 Gb/s Traveling-wave Modulator Driver with Large Reverse Terminations","authors":"Hector Andrade, Aaron Maharry, Luis A. Valenzuela, Navid Hosseinzadeh, C. Schow, J. Buckwalter","doi":"10.1109/BCICTS50416.2021.9682462","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682462","url":null,"abstract":"This paper presents a 56 Gb/s traveling-wave Mach-Zehnder Modulator (TW-MZM) driver fabricated in the GlobalFoundries 8XP 130-nm SiGe BiCMOS process employing a cascode topology. The quasi-open collector design delivers a 4.4 ${{mathrm{V}}_{text{pp}}}$ differential swing and reduces the amplitude of the secondary reflections while maintaining a low overall power consumption of 460 mW, or 8.2 pJ/bit at 56 Gb/s, including the modulator termination resistance dissipation. The driver has two variants, each of which provides a different TW-MZM biasing scheme, to enable operation at two different PN junction phase shifter biases. Eye-diagrams at up to 60 Gb/s are presented as well as bit-error rate (BER) bathtub curves.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128219212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Advances in Terahertz CMOS for 6G 用于6G的太赫兹CMOS的进展
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682460
M. Fujishima
{"title":"Advances in Terahertz CMOS for 6G","authors":"M. Fujishima","doi":"10.1109/BCICTS50416.2021.9682460","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682460","url":null,"abstract":"Terahertz has recently been attracting attention in communications although it has been mainly focused on the field of non-invasive sensing. In particular, the 300 GHz band, which can be used in the 44 GHz frequency range from 252 GHz to 296 GHz, is expected to be used for ultrahigh-speed wireless communications toward 6G. Traditionally, compound semiconductors and BiCMOS circuits with excellent high-frequency characteristics have been considered advantageous at terahertz (or sub-terahertz), including the 300 GHz band. In this talk, the significance and potential of realizing terahertz communications with CMOS integrated circuits, which have relatively poor high-frequency characteristics, will be discussed. An overview of ultra-wideband wireless communication in the terahertz band, including the 300 GHz band, will be given, and the necessity of a communication system using phased arrays and the significance of using CMOS integrated circuits in this system will be clarified. Finally, a 300 GHz CMOS wireless transceiver capable of transmitting data rates of up to 80 Gb/s will be presented, which can be used as an element of terahertz phased array.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"52 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127253441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Active Conducted EMI Suppression in GaN Switching Power Circuits GaN开关电源电路中有源传导EMI抑制
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682489
D. Ma, Dong Yan, Lixiong Du
{"title":"Active Conducted EMI Suppression in GaN Switching Power Circuits","authors":"D. Ma, Dong Yan, Lixiong Du","doi":"10.1109/BCICTS50416.2021.9682489","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682489","url":null,"abstract":"With the introduction of fast switching GaN power transistors, electromagnetic interference (EMI) has risen to record level in switching power circuits. To mitigate the challenge, this paper discusses recent active EMI suppression circuit solutions that are tailored for high switching frequency GaN power circuits. The focus is on the utilization and implementation of spread-spectrum modulation (SSM) techniques. Specifically, the author reviews two recent developments on continuous and random SSM (C-RSSM) approaches, using a novel and efficient Zener diode and a Markov-chain random signal generator respectively. The efforts are made on not only EMI suppression and but also fundamental power voltage regulation. Following the C-RSSM solutions, a multi-rate SSM (MR-SSM) approach is discussed, which minimizes spectrum overlaps and is capable of zero-voltage switching (ZVS) operation for efficiency improvement.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131237437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling 通过器件缩放改善SLCFET放大器的频率性能
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI: 10.1109/BCICTS50416.2021.9682467
S. Afroz, T. Vasen, Brian Novak, Ken A. Nagamatsu, P. Shea, S. Wanis, R. Howell, Josephine B. Chang
{"title":"Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling","authors":"S. Afroz, T. Vasen, Brian Novak, Ken A. Nagamatsu, P. Shea, S. Wanis, R. Howell, Josephine B. Chang","doi":"10.1109/BCICTS50416.2021.9682467","DOIUrl":"https://doi.org/10.1109/BCICTS50416.2021.9682467","url":null,"abstract":"This paper reports frequency performance improvements in Superlattice Castellated Field Effect Transistor (SLCFET) amplifier through device scaling. Device scaling incorporates the variations in castellation ridge width, castellation trench width, castellation length, gate stem length, gate hat length, gate offset, gate dielectric thickness, and passivation thickness. Highest ${f_{T}}$ and Fmax (70GHz/150GHz) values were achieved on devices with shortest castellation length. Shortening castellated access region reduces series resistance resulting in improved frequency performance. Thinner gate dielectric improves transconductance resulting enhancement in frequency performance as well.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132517691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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