Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling

Abstract

This paper reports frequency performance improvements in Superlattice Castellated Field Effect Transistor (SLCFET) amplifier through device scaling. Device scaling incorporates the variations in castellation ridge width, castellation trench width, castellation length, gate stem length, gate hat length, gate offset, gate dielectric thickness, and passivation thickness. Highest ${f_{T}}$ and Fmax (70GHz/150GHz) values were achieved on devices with shortest castellation length. Shortening castellated access region reduces series resistance resulting in improved frequency performance. Thinner gate dielectric improves transconductance resulting enhancement in frequency performance as well.