先进SiGe hbt模拟中的增强漂移扩散输运

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682487

M. Müller, M. Schröter, C. Jungemann, Christoph Weimer

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引用次数: 4

摘要

导出了一种新的一维漂移扩散输运公式，该公式可捕获非局部努力。介绍了该公式在两种先进SiGe结构中的应用。使用新公式的模拟结果与波尔兹曼输运方程和测量数据的结果吻合得很好。由于它的数值效率和简单性，所提出的公式是有用的技术优化和紧凑的模型开发。

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Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

A novel formulation of one-dimensional drift-diffusiontransport that captures non-local efforts is derived. Theapplication of the formulation to two advanced SiGe HBTstructures is presented. Simulations using the new formulationare shown to agree well with results from the Boltzmanntransport equation and measurement data. Due to its numericalefficiency and simplicity, the proposed formulation is useful fortechnology optimization and compact model development.

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来源期刊

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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