基于SiGe BiCMOS技术的基于变压器模式分离的268-325 GHz 5.2 dBm Psat倍频器

Sascha Breun, Albert-Marcel Schrotz, M. Dietz, V. Issakov, R. Weigel
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引用次数: 4

摘要

本文提出了一种268-325 GHz高输出功率、基于变压器的雷达应用倍频器,在304 GHz和57 GHz的3db带宽下实现5.2dBm饱和功率(Psat)。我们提出了一种基于改进的八角形变压器装置的电路概念,该装置用于有效地从差分功率放大器(PA)提取二次谐波,工作频率为输出频率的一半。该装置利用了二次谐波在PA输出处以共模存在的事实,而基频谐波保持在差分模式。因此,该变压器装置可以通过模式分离的方法提取二次谐波,同时作为输出匹配网络。它由两级级联码宽带驱动级驱动,在251-336 GHz的85 GHz带宽范围内提供超过0 dBm的Psat。在304 GHz时实现了20 dB的峰值转换增益,并在最大输出功率下保持在10 dB以上。该芯片采用130 nm SiGe BiCMOS技术制造,${f_{t}/f_{\max}}$为250 GHz / 370 GHz,功耗为505 mW,电源为3.65 V。据作者所知,5.2 dBm的功率是使用SiGe技术在该频率范围内报道的最高功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 268-325 GHz 5.2 dBm Psat Frequency Doubler Using Transformer-Based Mode Separation in SiGe BiCMOS Technology
This paper presents a 268-325 GHz high output power, transformer-based frequency doubler for radar applications achieving 5.2dBm saturated power (Psat) at 304 GHz and 57 GHz Psat 3 dB-bandwidth. We propose a circuit concept based on a modified octagonal transformer device that is used to efficiently extract the second harmonic from a differential power amplifier (PA), operating at half the output frequency. The device exploits the fact that the second harmonic is present in common-mode at the PA output, whereas the fundamental harmonic remains in differential mode. Hence, the transformer device enables the extraction of the second harmonic by the means of mode separation and is applied as output matching network, simultaneously. Driven by a two-stage, cascode-based wideband driving stage, it provides a Psat exceeding 0 dBm over a bandwidth of 85 GHz from 251-336 GHz. A peak conversion gain of 20 dB is achieved at 304 GHz and remains above 10 dB for operation at maximum output power. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ${f_{t}/f_{\max}}$ of 250 GHz / 370 GHz and consumes 505 mW from a 3.65 V supply. To the best of the authors knowledge, the power of 5.2 dBm is the highest reported in that frequency range using SiGe technology.
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