Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

Abstract

A novel formulation of one-dimensional drift-diffusiontransport that captures non-local efforts is derived. Theapplication of the formulation to two advanced SiGe HBTstructures is presented. Simulations using the new formulationare shown to agree well with results from the Boltzmanntransport equation and measurement data. Due to its numericalefficiency and simplicity, the proposed formulation is useful fortechnology optimization and compact model development.