一种超过130 ghz带宽的InP-DHBT基带放大模块

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682479

Teruo Jyo, M. Nagatani, M. Mutoh, Y. Shiratori, H. Wakita, Hiroyuki Takahashi

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引用次数: 6

摘要

我们设计并制造了一个带1毫米同轴连接器的宽带基带放大器模块，用于超过100 ghz带宽的应用。设计并制作了250 nm InP DHBT工艺的放大器集成电路。在放大器IC中使用了两种调峰方法来补偿封装带来的损耗。放大器集成电路通过倒装键合安装在石英基衬底上，以避免大损耗和反射。基板上射频线的阻抗设计考虑了用于维持倒装芯片键合强度的下填料。该放大器集成电路在175 GHz和208 GHz带宽下的直流增益为7.5 dB，峰值增益为+6.4 dB。制作的放大器模块实现了7.3 dB的直流增益和超过130 GHz的带宽，这是迄今为止基带放大器模块中最宽的带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Over 130-GHz-Bandwidth InP-DHBT Baseband Amplifier Module

We designed and fabricated a wideband baseband amplifier module with 1-mm coaxial connectors for over 100-GHz-bandwidth applications. An amplifier IC was designed and fabricated in 250-nm InP DHBT technology. Two peaking methods were used in the amplifier IC to compensate for the loss from packaging. The amplifier IC was mounted on a quartz-based substrate by flip-chip bonding to avoid large loss and reflection. The impedance of RF lines on the substrate was designed by taking into account an underfill used to maintain the strength of the flip-chip bonding. The fabricated amplifier IC achieved a DC gain of 7.5 dB with a peaking gain of +6.4 dB at 175 GHz and a bandwidth of 208 GHz. The fabricated amplifier module achieved a DC gain of 7.3 dB with a bandwidth of over 130 GHz, the widest bandwidth ever reported among baseband amplifier modules.

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来源期刊

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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