0.4-μm InP/InGaAs DHBT, 380 ghz ${f_{T}}$， > 600 ghz $f_{\max}$， BVCE0 > 4.5 V

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682209

N. Davy, V. Nodjiadjim, M. Riet, C. Mismer, M. Deng, C. Mukherjee, J. Renaudier, C. Maneux

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引用次数: 3

摘要

我们报道了一种0.4 μιm发射极宽度的复合梯度基极InP/InGaAs/InP DHBT技术，其电流增益截止频率(${f_{T}}$)和最大振荡频率($f_{\max}$)分别为380 GHz和605 GHz。dhbt的最大静态电流增益为29，共发射极击穿电压为4.7 V。通过缩小发射极尺寸和基极接触宽度，实现了600 GHz以上的射频性能。通过比较三种VNA校准方法以及提取110 GHz测量范围内的小信号参数，对测量结果进行了进一步的研究。

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0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 V

We report on a 0.4-μιm emitter width composition-graded-base InP/InGaAs/InP DHBT technology featuring a current gain cutoff frequency (${f_{T}}$) and a maximum oscillation frequency ($f_{\max}$) of 380 GHz and 605 GHz, respectively. The DHBTs demonstrate a maximum static current gain of 29 and a common-emitter breakdown voltage of 4.7 V. RF performances above 600 GHz were achieved through emitter size scaling and base contact width shrinking. Further investigations on measurements were performed by comparing three VNA calibration methods as well as through extraction of small-signal parameters over the 110 GHz measurement range.

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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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