A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology

Abstract

This paper presents a 10-130 GHz ultra-wideband distributed power amplifier (DPA) with 2.6 THz gain-bandwidth product (GBW). The DPA is composed of 3 stages each with multiple cascode amplifier sections. The circuit is realized using 90 nm SiGe BiCMOS process having a 255 GHz fT HBT. The amplifier achieves small-signal gain of 18-23 dB at 10-30 GHz and monotonically increasing to the peak of 33 dB at 98 GHz. The return losses are better than 10 dB covering more than 140 GHz. The circuit has a peak OP1dB of 13.1 dBm at 22 GHz. To the best of authors’ knowledge, the proposed amplifier achieves the largest GBW in SiGe DPAs while providing relatively high power.