一种10-130 GHz分布式功率放大器，实现2.6 THz GBW，峰值输出13.1 dBm P1dB，用于90nm SiGe HBT技术的超宽带应用

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2021-12-05 DOI:10.1109/BCICTS50416.2021.9682475

Oguz Kazan, Gabriel M. Rebeiz

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引用次数: 2

摘要

本文提出了一种10-130 GHz的超宽带分布式功率放大器(DPA)，其增益带宽积为2.6太赫兹(THz)。DPA由3级组成，每个级都有多个级联放大器部分。该电路采用90nm SiGe BiCMOS工艺实现，具有255ghz fT HBT。该放大器在10-30 GHz时可实现18-23 dB的小信号增益，在98 GHz时单调增加至33 dB的峰值。回波损耗小于10db，覆盖范围大于140ghz。该电路在22 GHz时的峰值OP1dB为13.1 dBm。据作者所知，所提出的放大器在提供相对较高的功率的同时实现了SiGe dpa中最大的GBW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT Technology

This paper presents a 10-130 GHz ultra-wideband distributed power amplifier (DPA) with 2.6 THz gain-bandwidth product (GBW). The DPA is composed of 3 stages each with multiple cascode amplifier sections. The circuit is realized using 90 nm SiGe BiCMOS process having a 255 GHz fT HBT. The amplifier achieves small-signal gain of 18-23 dB at 10-30 GHz and monotonically increasing to the peak of 33 dB at 98 GHz. The return losses are better than 10 dB covering more than 140 GHz. The circuit has a peak OP1dB of 13.1 dBm at 22 GHz. To the best of authors’ knowledge, the proposed amplifier achieves the largest GBW in SiGe DPAs while providing relatively high power.

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2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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