P. Magnée, D. Leenaerts, M. Heijden, T. Dinh, I. To, I. Brunets
{"title":"The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications","authors":"P. Magnée, D. Leenaerts, M. Heijden, T. Dinh, I. To, I. Brunets","doi":"10.1109/BCICTS50416.2021.9682483","DOIUrl":null,"url":null,"abstract":"Modern communication standards provide very high data rates, which put strict requirements on the technology that is being used. SiGe BiCMOS is still crucial for fulfilling specific functions in communication applications to enable these high data rates. SiGe enables Power Amplifiers with high efficiency for high linear output powers and Low Noise Amplifiers with both good noise performance and high linear gain.","PeriodicalId":284660,"journal":{"name":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS50416.2021.9682483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Modern communication standards provide very high data rates, which put strict requirements on the technology that is being used. SiGe BiCMOS is still crucial for fulfilling specific functions in communication applications to enable these high data rates. SiGe enables Power Amplifiers with high efficiency for high linear output powers and Low Noise Amplifiers with both good noise performance and high linear gain.