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Proceedings of 1994 IEEE International Reliability Physics Symposium最新文献

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High-voltage electron-beam-induced-current imaging of microdefects in laser diodes and MESFETs 激光二极管和mesfet中微缺陷的高压电子束感应电流成像
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307797
D. Hwang, L. Dechiaro, M.C. Wang, P. Lin, C. Zah, S. Ovadia, T. Lee, D. Darby, Y. Tkachenko, J.C.M. Hwang
{"title":"High-voltage electron-beam-induced-current imaging of microdefects in laser diodes and MESFETs","authors":"D. Hwang, L. Dechiaro, M.C. Wang, P. Lin, C. Zah, S. Ovadia, T. Lee, D. Darby, Y. Tkachenko, J.C.M. Hwang","doi":"10.1109/RELPHY.1994.307797","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307797","url":null,"abstract":"We have developed a new device characterization technique called High-Voltage Electron-Beam-Induced-Current (HV-EBIC). This technique marks a breakthrough in the art of EBIC, providing a much improved probing depth and spatial resolution without destructive sample preparation procedures. It can probe structures 0.5 /spl mu/m underneath the surface with a spatial resolution better than 0.1 /spl mu/m. It serves as the only nondestructive technique that reveals defect distribution and junction locations with sufficient spatial resolution, and therefore has many potential applications in semiconductor device development, manufacturing, and failure analysis. In this article, we describe the operation principles of HV-EBIC and its advantages over the conventional low-voltage EBIC using Monte Carlo simulation. To demonstrate the power of HV-EBIC, we present some preliminary results on the study of degradation mechanisms in In/sub 0.2/Ga/sub 0.8/As strained quantum-well lasers, and in GaAs metal-semiconductor field-effect transistors (MESFETs).<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113974351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The effects of materials and post-mold profiles an plastic encapsulated integrated circuits 塑料封装集成电路中材料和模后轮廓的影响
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307851
R. D. Mosbarger, D. J. Hickey
{"title":"The effects of materials and post-mold profiles an plastic encapsulated integrated circuits","authors":"R. D. Mosbarger, D. J. Hickey","doi":"10.1109/RELPHY.1994.307851","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307851","url":null,"abstract":"Post-mold cure contributes to the electrical and mechanical properties of Novalac molding materials and affects how those properties change with thermal and humidity environments. Forward biased parasitic gates may be created as the result of thermally induced material changes in conjunction with ionizing fields and by molding compound delamination from the die surface during high temperature assembly operations e.g., IR-reflow. Molding material conductivity and tolerance to moisture depends upon the material and the post-mold cure environment. Test methods have been developed and equipment is available to quantify compound electrical and mechanical performance and thereby predict material and part performance.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134424693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs 薄膜完全耗尽SOI mosfet中热载子效应的表征
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307857
Z. Ma, H. Wann, M. Chan, J. King, Y. Cheng, P. Ko, C. Hu
{"title":"Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs","authors":"Z. Ma, H. Wann, M. Chan, J. King, Y. Cheng, P. Ko, C. Hu","doi":"10.1109/RELPHY.1994.307857","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307857","url":null,"abstract":"Previous conflicting reports concerning fully-depleted SOI device hot electron reliability is partially due to misunderstanding over the maximum channel electric field (E/sub m/). Experimental results using SOI MOSFETs with body contacts indicate that E/sub m/ is just a weak function of thin-film SOI thickness (T/sub si/) and E/sub m/ can be significantly lower than in a bulk device with drain junction depth (X/sub j/) comparable to T/sub si/ The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (I/sub G/) of studying E, in SOI device without body contacts. Both N- and P-MOSFETs can have better hot-carrier reliability than comparable bulk devices. Thin film SOI MOSFETs have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114717907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Highly-reliable ultra-thin oxide formation using hydrogen-radical-balanced steam oxidation technology 采用氢自由基平衡蒸汽氧化技术，形成高度可靠的超薄氧化物
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307842
T. Ohmi, K. Nakamura, K. Makihara
{"title":"Highly-reliable ultra-thin oxide formation using hydrogen-radical-balanced steam oxidation technology","authors":"T. Ohmi, K. Nakamura, K. Makihara","doi":"10.1109/RELPHY.1994.307842","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307842","url":null,"abstract":"A new oxide formation technology featuring oxidation in a strongly reductive ambient followed by an Ar gas annealing has been developed. We call this oxidation method H/sup */-H/sub 2/O oxidation. In this oxidation process, only the strong Si-O bond which is perfectly resistant even to the strongly reductive ambient survives and a high integrity oxide film can be grown. From the results of the breakdown tests by stepped voltage (E/sub BD/) and constant current stress (Q/sub BD/), the gate voltage shift (Vg shift) measurement under constant current stress, and the stress induced leakage current test, it has been revealed that the thin oxide film featuring high-integrity in breakdown and strong immunity from electrical stress is obtained by H/sup */-H/sub 2/O oxidation with post-oxidation-annealing in Ar ambient. This oxidation method is effective to form the thin oxide used under high electric field condition such as a tunnel oxide for flash memories.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130394643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electromigration after stress-induced migration test in quarter-micron Al interconnects 四分之一微米铝互连中应力诱导迁移试验后的电迁移
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307828
K. Hoshino, K. Koyama, Y. Sugano
{"title":"Electromigration after stress-induced migration test in quarter-micron Al interconnects","authors":"K. Hoshino, K. Koyama, Y. Sugano","doi":"10.1109/RELPHY.1994.307828","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307828","url":null,"abstract":"A sequential test of stress-induced migration and electromigration was employed to evaluate Al interconnect reliability. We investigated electromigration after storage testing for stress-induced failure and found a deterioration in electromigration lifetime of quarter-micron Al interconnects caused by slit-like voids generated during the storage test.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115998748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Mechanical properties and adhesion measurements of films used in advanced packages 先进封装用薄膜的机械性能和附着力测量
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307849
M. Shell-De Guzman, M. Hack, G. Neubauer
{"title":"Mechanical properties and adhesion measurements of films used in advanced packages","authors":"M. Shell-De Guzman, M. Hack, G. Neubauer","doi":"10.1109/RELPHY.1994.307849","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307849","url":null,"abstract":"\"Depth-sensing\" ultra micro-indentation is a novel method for measuring the hardness, elastic modulus, and adhesion of films as thin as 0.4 micrometers. Three different techniques can be employed to determine these mechanical properties. The first part of this paper describes each technique. The second part of this paper presents two applications that employ these techniques to measure the properties of various materials used in advanced integrated circuit packages, including polyimide die coat modulus and adhesion, and SnPb solder plate hardness.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120958492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulating total-dose radiation effects on circuit behavior 模拟总剂量辐射对电路行为的影响
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307814
R. Tu, G. Lum, P. Pavan, P. Ko, C. Hu
{"title":"Simulating total-dose radiation effects on circuit behavior","authors":"R. Tu, G. Lum, P. Pavan, P. Ko, C. Hu","doi":"10.1109/RELPHY.1994.307814","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307814","url":null,"abstract":"Using RAD, a new module of Berkeley Reliability Tools (BERT), as a tool, users can design circuits to be radiation hard and characterize circuit behavior in environments where radiation is present. Previous simulators could not provide circuit output waveforms after radiation because it was difficult to simulate the effect of radiation on a circuit in operation (AC bias condition) and because radiation affected MOSFETs of different processes in different ways. We have dealt with these problems and for the first time, successfully provided \"SPICE-like\" simulation results.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114914844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The effect of plasma-induced oxide and interface degradation on hot carrier reliability 等离子体诱导氧化和界面退化对热载流子可靠性的影响
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307832
K. Noguchi, K. Okumura
{"title":"The effect of plasma-induced oxide and interface degradation on hot carrier reliability","authors":"K. Noguchi, K. Okumura","doi":"10.1109/RELPHY.1994.307832","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307832","url":null,"abstract":"A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced. Superior immunity of reoxidized-nitrided-oxide to hot carrier degradation after plasma stress is also demonstrated.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116938420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Photon emission study of ESD protection devices under second breakdown conditions 二次击穿条件下ESD保护器件的光子发射研究
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307822
H. Ishizuka, K. Okuyama, K. Kubota
{"title":"Photon emission study of ESD protection devices under second breakdown conditions","authors":"H. Ishizuka, K. Okuyama, K. Kubota","doi":"10.1109/RELPHY.1994.307822","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307822","url":null,"abstract":"The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128542041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
An automated test system for fault location in VLSI circuits VLSI电路故障定位自动化测试系统
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307818
T. Rogers, Š. Molnár
{"title":"An automated test system for fault location in VLSI circuits","authors":"T. Rogers, Š. Molnár","doi":"10.1109/RELPHY.1994.307818","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307818","url":null,"abstract":"The use of stroboscopic voltage contrast imaging for the design validation of prototype integrated circuits and testing of commercial devices is widely accepted. However, as circuit complexities increase, the information content of such images increases significantly and image processing techniques have proved to be useful for revealing differences in the operation between 'golden' and faulty devices. Described in this paper is a test system for VLSI circuits which combines a conventional IC tester with an electron-beam probe system, a relatively low cost image processor and PC to provide immediate 'real-time' processing as well as a significant degree of automation for the detection of faults in both commercially sourced and custom designed circuits. Colour is used to encode voltage and timing information in images to assist in the location and analysis of faults.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134269032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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