Proceedings of 1994 IEEE International Reliability Physics Symposium最新文献

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Voltage overshoots and n-MOSFET hot carrier robustness in VLSI circuits VLSI电路中的电压超调与n-MOSFET热载流子稳健性
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307855
L.R. Mistry, R. Hokinson, B. Gieseke, T. F. Fox, R. Preston, B. Doyle
{"title":"Voltage overshoots and n-MOSFET hot carrier robustness in VLSI circuits","authors":"L.R. Mistry, R. Hokinson, B. Gieseke, T. F. Fox, R. Preston, B. Doyle","doi":"10.1109/RELPHY.1994.307855","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307855","url":null,"abstract":"Capacitive coupling and charge redistribution effects in product circuits can result in large V/sub ds/ overshoots which cause much larger reductions in n-MOSFET hot carrier failure times than the transition time dependencies previously studied. Using a variety of simulations, we show that these effects can occur in typical high performance microprocessor circuits. Controlling these effects and verifying circuit compliance are key to ensuring hot carrier robust circuit design. Although we focus on n-MOSFET's a symmetrical argument can be made for p-MOSFET's.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122170252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models 利用基于物理的界面和氧化物电荷生成模型精确模拟EPROM热载子诱导降解
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307843
J. Peng, Qi Lin, P. Fang, M. Kwan, S. Longcor, J. Lien
{"title":"Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models","authors":"J. Peng, Qi Lin, P. Fang, M. Kwan, S. Longcor, J. Lien","doi":"10.1109/RELPHY.1994.307843","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307843","url":null,"abstract":"In this work, we present a self-consistent simulation method based on physical models that can correctly predict the Ids, Isub, and Igs degradation with few physical parameters. The effects of the interface and oxide charges on device degradation have been clearly identified without assuming any predetermined interface and oxide charge spatial distributions. Simulation results indicate a much lower electron energy than 3.2 eV can create the interface states which results in an interface damage lateral distribution much wider than that of the oxide damage. This method has been successfully used to simulate a 0.5 /spl mu/m EPROM device degradation in critical operation regions.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117060731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Novel methods for the reliability testing of ferroelectric DRAM storage capacitors 铁电DRAM存储电容器可靠性测试的新方法
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307831
C. Sudhama, R. Khamankaar, Jiyoung Kim, B. Jiang, J. Lee, P. Maniar, Robert E. Jones, C. Mogab
{"title":"Novel methods for the reliability testing of ferroelectric DRAM storage capacitors","authors":"C. Sudhama, R. Khamankaar, Jiyoung Kim, B. Jiang, J. Lee, P. Maniar, Robert E. Jones, C. Mogab","doi":"10.1109/RELPHY.1994.307831","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307831","url":null,"abstract":"A new technique has been developed for the characterization of dielectric voltage- and charge-decay times (T/sub V/ and T/sub Q/) in sol-gel derived ferroelectric films under open-circuit conditions. Voltage decay potentially poses a limitation on the maximum allowable refresh-time in the DRAM capacitor. This direct measurement of T/sub V/ is preferred to its conventional estimation based on the current-voltage relationship, because of the implicit inclusion of nonlinearities and stress-induced leakage-reduction effects. Undoped and lanthanum-doped lead-zirconate-titanate (PZT) films have also been characterized for frequency-dispersion in large-signal polarization, bit \"0\" relaxation and a new bit \"1\" relaxation mechanism using techniques developed recently. It is proposed that any evaluation of high-permittivity dielectrics for DRAM applications must include these measurements.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"428 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129784520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hot-carrier-induced degradation in ultra-thin, fully-depleted, deep-submicron nMOS and pMOS SOI transistors 超薄、完全耗尽、深亚微米nMOS和pMOS SOI晶体管的热载流子诱导退化
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307856
T. Tsuchiya, T. Ohno, Y. Kado, J. Kai
{"title":"Hot-carrier-induced degradation in ultra-thin, fully-depleted, deep-submicron nMOS and pMOS SOI transistors","authors":"T. Tsuchiya, T. Ohno, Y. Kado, J. Kai","doi":"10.1109/RELPHY.1994.307856","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307856","url":null,"abstract":"The hot-carrier-injected oxide region is systematically investigated for fully depleted surface-channel (SC) nMOS and SC- and buried-channel pMOSFETs fabricated on an ultra-thin (50 nm)-film SIMOX wafer. NMOSFET degradation is shown to be caused mainly by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the back oxide and the front oxide. It is shown experimentally for the first-time that these fully depleted devices with effective channel lengths of 0.1-0.2 /spl mu/m have fairly high hot-carrier immunity, even for single-drain structures.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125557390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Reliability of laser diode modules in temperature-uncontrolled environment 温度控制环境下激光二极管模块的可靠性
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307798
M. Ciappa, P. Malberti
{"title":"Reliability of laser diode modules in temperature-uncontrolled environment","authors":"M. Ciappa, P. Malberti","doi":"10.1109/RELPHY.1994.307798","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307798","url":null,"abstract":"An extensive thermal-cycling program of InP laser diode modules, in cylindrical package with fiber pig-tail, from two different manufacturers has been performed in order to evaluate their reliability. Experimental results are presented, the main failure mechanisms are identified, and a simple life-time model is proposed. Using this model, the number of cycles to failure under different thermal stress conditions may be computed.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125962024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Wafer-level pulsed-DC electromigration response at very high frequencies 晶圆级脉冲直流电迁移响应在非常高的频率
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-03-01 DOI: 10.1109/RELPHY.1994.307836
D. Pierce, E. Snyder, S. Swanson, L. W. Irwin
{"title":"Wafer-level pulsed-DC electromigration response at very high frequencies","authors":"D. Pierce, E. Snyder, S. Swanson, L. W. Irwin","doi":"10.1109/RELPHY.1994.307836","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307836","url":null,"abstract":"DC and pulsed-DC electromigration tests were performed at the wafer level using standard and self-stressing test structures. DC characterization tests over a very large temperature range (180 to 560/spl deg/C) were consistent with an interface diffusion mechanism in parallel with lattice diffusion. That data allowed for extraction of the respective activation energies and the diffusion coefficient of the rapid mechanism. The ability to extract simultaneously a defect-based diffusion coefficient and activation energy is significant given the extreme difficulty in making those measurements in aluminum. The pulsed-DC experiments were conducted over a range that includes the highest frequency to date, from DC to 500 MHz. Measurements were also made as a function of duty factor from 15% to 100% at selected frequencies. The data shows that the pulsed-DC lifetime is consistent with the average current density model at high (> 10 MHz) frequencies and showed no additional effects at the highest frequency tested (500 MHz). At low frequencies, we attribute the lessened enhancement to thermal effects rather than vacancy relaxation effects. Finally, the deviation in lifetime from the expected current density dependence, characterized over 1 1/2 orders of magnitude in current density, is explained in terms of a shift in the boundary condition for electromigration as the current density is decreased.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130127486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
The advent of failure analysis software technology 故障分析软件技术的出现
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-02-01 DOI: 10.1109/RELPHY.1994.307817
C. Henderson, R. Barnard
{"title":"The advent of failure analysis software technology","authors":"C. Henderson, R. Barnard","doi":"10.1109/RELPHY.1994.307817","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307817","url":null,"abstract":"The increasing complexity of integrated circuits demands that software tools, in addition to hardware tools, be used for successful diagnosis of failure. A series of customizable software tools have been developed that organize failure analysis information and provide expert level help to failure analysts to increase their productivity and success.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129627122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
CMOS-SRAM soft-error simulation system CMOS-SRAM软误差仿真系统
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1900-01-01 DOI: 10.1109/RELPHY.1994.307815
S. Satoh, R. Sude, H. Tashiro, N. Higaki, N. Nakayama
{"title":"CMOS-SRAM soft-error simulation system","authors":"S. Satoh, R. Sude, H. Tashiro, N. Higaki, N. Nakayama","doi":"10.1109/RELPHY.1994.307815","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307815","url":null,"abstract":"A soft-error simulation system for designing CMOS-SRAM cells is presented. We propose a new noise current model and combine it with the SRAM's equivalent circuit. Simulation results agree with those from a compulsory exposure experiment. Our system predicts the field soft-error rate from the alpha-particle emission rate, mask layout, and process conditions.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127581900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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