Hot-carrier-induced degradation in ultra-thin, fully-depleted, deep-submicron nMOS and pMOS SOI transistors

Abstract

The hot-carrier-injected oxide region is systematically investigated for fully depleted surface-channel (SC) nMOS and SC- and buried-channel pMOSFETs fabricated on an ultra-thin (50 nm)-film SIMOX wafer. NMOSFET degradation is shown to be caused mainly by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the back oxide and the front oxide. It is shown experimentally for the first-time that these fully depleted devices with effective channel lengths of 0.1-0.2 /spl mu/m have fairly high hot-carrier immunity, even for single-drain structures.<>