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Proceedings of 1994 IEEE International Reliability Physics Symposium最新文献

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Injection-enhanced defect reactions in III-V light emitting diodes III-V型发光二极管的注入增强缺陷反应
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307800
T.V. Torchinskaya, A. Rybak
{"title":"Injection-enhanced defect reactions in III-V light emitting diodes","authors":"T.V. Torchinskaya, A. Rybak","doi":"10.1109/RELPHY.1994.307800","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307800","url":null,"abstract":"Injection-enhanced defect transformations in GaP LEDs with active layer doped by N (GaP:N), or N, Zn, and O (GaP:N,ZnO), as well as AlGaAs:Zn, AlGaAs:Ge, and GaAs:Si LEDs were investigated both theoretically and experimentally. Four principal types of defect transformations were determined to take place in these LEDs. Their nature and parameters were determined from the comparison of theoretical and experimental data.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128771497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromigration reliability improvement of W-plug vias by titanium layering 镀钛提高w塞过孔的电迁移可靠性
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307840
C. Graas, H. A. Le, J. McPherson, R. Havemann
{"title":"Electromigration reliability improvement of W-plug vias by titanium layering","authors":"C. Graas, H. A. Le, J. McPherson, R. Havemann","doi":"10.1109/RELPHY.1994.307840","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307840","url":null,"abstract":"The electromigration (Er) performance of layered Al-0.5%Cu and Al-1%Si-0.5%Cu metallization systems was investigated, including leads with refractory barrier and capping layers, and tungsten-filled via holes. While the W-plugs exhibited a lifetime shorter than the leads, a dramatic improvement in EM performance of the vias was achieved by incorporating a thin layer of titanium between the aluminum and its cap. Among the most likely explanations for this observation is that the aluminum is protected from physical damage during via etch by the continuous TiAl/sub 3/ layer which forms by reaction between the titanium and the aluminum. Current flow simulations show complex crowding effects at the bottom of the vias. The role of grain boundaries and the effects of dopants on early via failure modes are also discussed.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115775844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
iProbe-d: a hot-carrier and oxide reliability simulator iProbe-d:热载流子和氧化物可靠性模拟器
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307824
Ping-Chung Li, G. Stamoulis, I. Hajj
{"title":"iProbe-d: a hot-carrier and oxide reliability simulator","authors":"Ping-Chung Li, G. Stamoulis, I. Hajj","doi":"10.1109/RELPHY.1994.307824","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307824","url":null,"abstract":"In this paper we describe a hot-carrier and oxide reliability simulator, iProbe-d. In this program, a probabilistic timing approach is employed to find the most susceptible devices to hot-carrier degradation and/or oxide breakdown in a CMOS VLSI digital circuit design under expected operating conditions. After the damage in each device is determined, a combination of damaged-transistor model, RC delay and critical path analysis is used to estimate the impact of hot-carrier effects (HCE) on circuit performance; namely, the increase of circuit delay. The results can then be used to improve the reliability of the circuit prior to fabrication.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132049657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Segregation of Cu to grain boundaries by aging treatment and its effect on EM resistance for AlCu/TiN lines 时效处理Cu到晶界的偏析及其对AlCu/TiN合金耐电磁性能的影响
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307835
T. Nemoto, T. Nogami
{"title":"Segregation of Cu to grain boundaries by aging treatment and its effect on EM resistance for AlCu/TiN lines","authors":"T. Nemoto, T. Nogami","doi":"10.1109/RELPHY.1994.307835","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307835","url":null,"abstract":"The electromigration (EM) resistance of AlCu(0.5 wt.%) multilayered lines improved by a factor of 10 after a low-temperature annealing at 250/spl deg/C for 10 hrs. The authors use the term \"aging treatment\" in this paper to describe such low-temperature annealing. Redistribution of Cu atoms after aging treatment was observed using TEM and energy dispersive X-ray spectroscopy (EDX). In addition to CuAl2 precipitates, segregated Cu, which was invisible by standard TEM imaging, was detected at grain boundaries after the aging treatment. However, aging treatments that were too long decreased both the EM lifetime and the segregated invisible Cu. The same temporal variation of EM lifetime and segregated Cu implies that the microstructure in which grain boundaries were coated with diffused Cu atoms during the aging treatment is that which improves EM resistance.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131037456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Improvement in the electromigration lifetime using hyper-textured aluminum formed on amorphous tantalum-aluminum underlayer 在非晶钽铝衬底上形成超织构铝提高电迁移寿命
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307839
H. Toyoda, T. Kawanoue, M. Hasunuma, H. Kaneko, M. Miyauchi
{"title":"Improvement in the electromigration lifetime using hyper-textured aluminum formed on amorphous tantalum-aluminum underlayer","authors":"H. Toyoda, T. Kawanoue, M. Hasunuma, H. Kaneko, M. Miyauchi","doi":"10.1109/RELPHY.1994.307839","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307839","url":null,"abstract":"A new fabrication technique for hyper-textured aluminum (Al) films has been developed by using an amorphous tantalum-aluminum (Ta-Al) underlayer. The full width at half maximum (FWHM) value of the (111) rocking curve for Al film has been attained to be less than 1 degree. It has been clarified that the empirical relation between the electromigration (EM) lifetime of an Al interconnection /spl tau/ and the FWHM value /spl omega/ is described as /spl tausup /spl prop/spl omegasup -2/. This result has confirmed that a hyper-texture is a promising approach to withstand higher current densities required in future ULSIs.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133527867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Effect of contamination on copper migration in TAB tape structures 污染对TAB带结构中铜迁移的影响
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307852
D. Nieman
{"title":"Effect of contamination on copper migration in TAB tape structures","authors":"D. Nieman","doi":"10.1109/RELPHY.1994.307852","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307852","url":null,"abstract":"Copper migration in adhesive of Tape Automated Bonding (TAB) tape during biased moisture stress can cause failure. Experiments aimed at reducing copper migration show that copper precipitation lengths after HAST are linearly proportional to chloride concentration in the TAB tape material. Discharge potential measurements of TAB tape in 156 /spl deg/C bake are correlated to chloride concentration.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129527609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques 用总注入电荷技术表征p沟道mosfet的热载子诱导降解
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307860
D. Huang, E. E. King, L.J. Palkuti
{"title":"Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques","authors":"D. Huang, E. E. King, L.J. Palkuti","doi":"10.1109/RELPHY.1994.307860","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307860","url":null,"abstract":"A method to evaluate the sensitivity of p-channel MOSFETs to hot-carrier-induced damage by using the total injected charge as the degradation monitor is presented. The advantage of the method is that lifetimes for all devices made with a particular process correlate to the same straight line with respect to the total injected charge with the slope about 1.8. It then becomes easy to compare the hot-carrier sensitivity of p-channel devices made by different process technologies.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"6 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128767961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simplified and practical estimation of package cracking during reflow soldering process 回流焊过程中封装裂纹的简化和实用估计
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307848
K. Sawada, T. Nakazawa, N. Kawamura, K. Matsumoto, Y. Hiruta, T. Sudo
{"title":"Simplified and practical estimation of package cracking during reflow soldering process","authors":"K. Sawada, T. Nakazawa, N. Kawamura, K. Matsumoto, Y. Hiruta, T. Sudo","doi":"10.1109/RELPHY.1994.307848","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307848","url":null,"abstract":"A simple method has been developed to estimate cracking of plastic packages during reflow soldering process. A criterion for estimating package cracking has been introduced by comparing the mold resin fracture toughness and the maximum value of the stress intensity factor in the package. The criterion equation for package cracking was made to an empirical form. The real-time measurement of package deformation is effective for providing information on the difference of the fracture mode. The difference of the delamination in the package causes the different shape of the deformation curve. The absorption characteristic of the package obeys Fick's law even for thinner packages.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125404784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/ 本征薄SiO/ sub2 /中随时间变化的介电击穿场和温度加速度
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307847
J. Suehle, P. Chaparala, C. Messick, W. M. Miller, K. Boyko
{"title":"Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/","authors":"J. Suehle, P. Chaparala, C. Messick, W. M. Miller, K. Boyko","doi":"10.1109/RELPHY.1994.307847","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307847","url":null,"abstract":"Time-Dependent Dielectric Breakdown (TDDB) data are presented for 15- and 22.5-nm oxides collected over a wide range of electric fields and temperatures. The results indicate that it is necessary to obtain data over this range to distinguish between the two field acceleration models and to quantify the electric field and temperature dependencies of the thermal activation energy and the field acceleration factor, respectively. We also report on the TDDB characteristics of thin SiO/sub 2/ films at temperatures as high as 400/spl deg/C and demonstrate the use of these temperatures to accelerate TDDB.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122231960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 91
Thermomechanical reliability assessment in SM- and COB-technology by combined experimental and finite element method 试验与有限元相结合的SM- cob技术热力可靠性评估
Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI: 10.1109/RELPHY.1994.307799
R. Dudek, B. Michel
{"title":"Thermomechanical reliability assessment in SM- and COB-technology by combined experimental and finite element method","authors":"R. Dudek, B. Michel","doi":"10.1109/RELPHY.1994.307799","DOIUrl":"https://doi.org/10.1109/RELPHY.1994.307799","url":null,"abstract":"In the paper, the authors address the issue of thermo-mechanically stressed microelectronic assemblies. An approach combining finite element simulation and advanced in-situ measuring techniques are presented. Examples given in the text illustrate the application of the experimental methods such as micro moire technique, speckle pattern photography or X-ray stress analysis in connection with numerical simulations. Finally, actual results concerning solder joint reliability are discussed.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114103608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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