Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques

Abstract

A method to evaluate the sensitivity of p-channel MOSFETs to hot-carrier-induced damage by using the total injected charge as the degradation monitor is presented. The advantage of the method is that lifetimes for all devices made with a particular process correlate to the same straight line with respect to the total injected charge with the slope about 1.8. It then becomes easy to compare the hot-carrier sensitivity of p-channel devices made by different process technologies.<>