III-V型发光二极管的注入增强缺陷反应

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI:10.1109/RELPHY.1994.307800

T.V. Torchinskaya, A. Rybak

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摘要

本文从理论和实验两方面研究了有源层掺杂N (GaP:N)、N、Zn和O (GaP:N,ZnO)以及AlGaAs:Zn、AlGaAs:Ge和GaAs:Si led的注入增强缺陷转换。确定在这些led中发生四种主要类型的缺陷转换。它们的性质和参数是通过理论和实验数据的比较确定的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Injection-enhanced defect reactions in III-V light emitting diodes

Injection-enhanced defect transformations in GaP LEDs with active layer doped by N (GaP:N), or N, Zn, and O (GaP:N,ZnO), as well as AlGaAs:Zn, AlGaAs:Ge, and GaAs:Si LEDs were investigated both theoretically and experimentally. Four principal types of defect transformations were determined to take place in these LEDs. Their nature and parameters were determined from the comparison of theoretical and experimental data.<>

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Proceedings of 1994 IEEE International Reliability Physics Symposium

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