Segregation of Cu to grain boundaries by aging treatment and its effect on EM resistance for AlCu/TiN lines

T. Nemoto, T. Nogami
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引用次数: 9

Abstract

The electromigration (EM) resistance of AlCu(0.5 wt.%) multilayered lines improved by a factor of 10 after a low-temperature annealing at 250/spl deg/C for 10 hrs. The authors use the term "aging treatment" in this paper to describe such low-temperature annealing. Redistribution of Cu atoms after aging treatment was observed using TEM and energy dispersive X-ray spectroscopy (EDX). In addition to CuAl2 precipitates, segregated Cu, which was invisible by standard TEM imaging, was detected at grain boundaries after the aging treatment. However, aging treatments that were too long decreased both the EM lifetime and the segregated invisible Cu. The same temporal variation of EM lifetime and segregated Cu implies that the microstructure in which grain boundaries were coated with diffused Cu atoms during the aging treatment is that which improves EM resistance.<>
时效处理Cu到晶界的偏析及其对AlCu/TiN合金耐电磁性能的影响
在250/spl℃低温退火10小时后,AlCu(0.5 wt.%)多层线的电迁移电阻提高了10倍。作者在本文中使用“时效处理”一词来描述这种低温退火。利用透射电镜(TEM)和能量色散x射线能谱(EDX)观察了时效处理后Cu原子的重分布。时效处理后,在晶界处除了有CuAl2析出外,还发现了标准透射电镜不可见的Cu偏析。然而,过长的时效处理降低了EM寿命和分离的不可见Cu。EM寿命和Cu偏析的时间变化表明,时效处理过程中在晶界上包覆弥散Cu原子的组织能提高合金的EM抗力
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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