J. Peng, Qi Lin, P. Fang, M. Kwan, S. Longcor, J. Lien
{"title":"利用基于物理的界面和氧化物电荷生成模型精确模拟EPROM热载子诱导降解","authors":"J. Peng, Qi Lin, P. Fang, M. Kwan, S. Longcor, J. Lien","doi":"10.1109/RELPHY.1994.307843","DOIUrl":null,"url":null,"abstract":"In this work, we present a self-consistent simulation method based on physical models that can correctly predict the Ids, Isub, and Igs degradation with few physical parameters. The effects of the interface and oxide charges on device degradation have been clearly identified without assuming any predetermined interface and oxide charge spatial distributions. Simulation results indicate a much lower electron energy than 3.2 eV can create the interface states which results in an interface damage lateral distribution much wider than that of the oxide damage. This method has been successfully used to simulate a 0.5 /spl mu/m EPROM device degradation in critical operation regions.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models\",\"authors\":\"J. Peng, Qi Lin, P. Fang, M. Kwan, S. Longcor, J. Lien\",\"doi\":\"10.1109/RELPHY.1994.307843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present a self-consistent simulation method based on physical models that can correctly predict the Ids, Isub, and Igs degradation with few physical parameters. The effects of the interface and oxide charges on device degradation have been clearly identified without assuming any predetermined interface and oxide charge spatial distributions. Simulation results indicate a much lower electron energy than 3.2 eV can create the interface states which results in an interface damage lateral distribution much wider than that of the oxide damage. This method has been successfully used to simulate a 0.5 /spl mu/m EPROM device degradation in critical operation regions.<<ETX>>\",\"PeriodicalId\":276224,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1994.307843\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1994.307843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models
In this work, we present a self-consistent simulation method based on physical models that can correctly predict the Ids, Isub, and Igs degradation with few physical parameters. The effects of the interface and oxide charges on device degradation have been clearly identified without assuming any predetermined interface and oxide charge spatial distributions. Simulation results indicate a much lower electron energy than 3.2 eV can create the interface states which results in an interface damage lateral distribution much wider than that of the oxide damage. This method has been successfully used to simulate a 0.5 /spl mu/m EPROM device degradation in critical operation regions.<>