利用基于物理的界面和氧化物电荷生成模型精确模拟EPROM热载子诱导降解

J. Peng, Qi Lin, P. Fang, M. Kwan, S. Longcor, J. Lien
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引用次数: 6

摘要

在这项工作中,我们提出了一种基于物理模型的自洽模拟方法,该方法可以在很少的物理参数下正确预测Ids, Isub和Igs的退化。在不假设任何预定的界面和氧化物电荷空间分布的情况下,已经清楚地确定了界面和氧化物电荷对器件退化的影响。模拟结果表明,当电子能量远低于3.2 eV时,可以产生界面态,导致界面损伤的横向分布比氧化物损伤的横向分布宽得多。该方法已成功地用于模拟临界工作区域0.5 /spl mu/m EPROM器件的退化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models
In this work, we present a self-consistent simulation method based on physical models that can correctly predict the Ids, Isub, and Igs degradation with few physical parameters. The effects of the interface and oxide charges on device degradation have been clearly identified without assuming any predetermined interface and oxide charge spatial distributions. Simulation results indicate a much lower electron energy than 3.2 eV can create the interface states which results in an interface damage lateral distribution much wider than that of the oxide damage. This method has been successfully used to simulate a 0.5 /spl mu/m EPROM device degradation in critical operation regions.<>
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