四分之一微米铝互连中应力诱导迁移试验后的电迁移

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI:10.1109/RELPHY.1994.307828

K. Hoshino, K. Koyama, Y. Sugano

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引用次数: 5

摘要

采用应力诱导迁移和电迁移的顺序试验来评估铝互连的可靠性。我们研究了应力诱发失效的存储测试后的电迁移，发现在存储测试过程中产生的裂缝状空隙导致四分之一微米铝互连的电迁移寿命恶化

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Electromigration after stress-induced migration test in quarter-micron Al interconnects

A sequential test of stress-induced migration and electromigration was employed to evaluate Al interconnect reliability. We investigated electromigration after storage testing for stress-induced failure and found a deterioration in electromigration lifetime of quarter-micron Al interconnects caused by slit-like voids generated during the storage test.<>

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Proceedings of 1994 IEEE International Reliability Physics Symposium

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