Photon emission study of ESD protection devices under second breakdown conditions

Abstract

The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<>