模拟总剂量辐射对电路行为的影响

R. Tu, G. Lum, P. Pavan, P. Ko, C. Hu
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引用次数: 4

摘要

使用伯克利可靠性工具(BERT)的一个新模块RAD作为工具,用户可以设计出抗辐射电路,并表征存在辐射环境中的电路行为。以往的模拟器无法提供辐射后的电路输出波形,因为很难模拟辐射对工作中的电路(交流偏置条件下)的影响,而且辐射对不同工艺的mosfet的影响方式也不同。我们已经处理了这些问题,并首次成功地提供了“类似spice”的模拟结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulating total-dose radiation effects on circuit behavior
Using RAD, a new module of Berkeley Reliability Tools (BERT), as a tool, users can design circuits to be radiation hard and characterize circuit behavior in environments where radiation is present. Previous simulators could not provide circuit output waveforms after radiation because it was difficult to simulate the effect of radiation on a circuit in operation (AC bias condition) and because radiation affected MOSFETs of different processes in different ways. We have dealt with these problems and for the first time, successfully provided "SPICE-like" simulation results.<>
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