High-voltage electron-beam-induced-current imaging of microdefects in laser diodes and MESFETs

Proceedings of 1994 IEEE International Reliability Physics Symposium Pub Date : 1994-04-11 DOI:10.1109/RELPHY.1994.307797

D. Hwang, L. Dechiaro, M.C. Wang, P. Lin, C. Zah, S. Ovadia, T. Lee, D. Darby, Y. Tkachenko, J.C.M. Hwang

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引用次数: 6

Abstract

We have developed a new device characterization technique called High-Voltage Electron-Beam-Induced-Current (HV-EBIC). This technique marks a breakthrough in the art of EBIC, providing a much improved probing depth and spatial resolution without destructive sample preparation procedures. It can probe structures 0.5 /spl mu/m underneath the surface with a spatial resolution better than 0.1 /spl mu/m. It serves as the only nondestructive technique that reveals defect distribution and junction locations with sufficient spatial resolution, and therefore has many potential applications in semiconductor device development, manufacturing, and failure analysis. In this article, we describe the operation principles of HV-EBIC and its advantages over the conventional low-voltage EBIC using Monte Carlo simulation. To demonstrate the power of HV-EBIC, we present some preliminary results on the study of degradation mechanisms in In/sub 0.2/Ga/sub 0.8/As strained quantum-well lasers, and in GaAs metal-semiconductor field-effect transistors (MESFETs).<>

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激光二极管和mesfet中微缺陷的高压电子束感应电流成像

我们开发了一种新的器件表征技术，称为高压电子束感应电流(HV-EBIC)。该技术标志着EBIC技术的突破，在没有破坏性样品制备程序的情况下，提供了大大改进的探测深度和空间分辨率。可探测地表以下0.5 /spl mu/m的结构，空间分辨率优于0.1 /spl mu/m。它是唯一一种能够以足够的空间分辨率揭示缺陷分布和结位置的无损技术，因此在半导体器件开发、制造和失效分析方面具有许多潜在的应用。在本文中，我们描述了HV-EBIC的工作原理及其相对于传统低压EBIC的优点。为了证明HV-EBIC的能力，我们在in /sub 0.2/Ga/sub 0.8/As应变量子阱激光器和GaAs金属半导体场效应晶体管(mesfet)中研究了一些退化机制的初步结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1994 IEEE International Reliability Physics Symposium

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