{"title":"等离子体诱导氧化和界面退化对热载流子可靠性的影响","authors":"K. Noguchi, K. Okumura","doi":"10.1109/RELPHY.1994.307832","DOIUrl":null,"url":null,"abstract":"A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced. Superior immunity of reoxidized-nitrided-oxide to hot carrier degradation after plasma stress is also demonstrated.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"The effect of plasma-induced oxide and interface degradation on hot carrier reliability\",\"authors\":\"K. Noguchi, K. Okumura\",\"doi\":\"10.1109/RELPHY.1994.307832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced. Superior immunity of reoxidized-nitrided-oxide to hot carrier degradation after plasma stress is also demonstrated.<<ETX>>\",\"PeriodicalId\":276224,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1994.307832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1994.307832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effect of plasma-induced oxide and interface degradation on hot carrier reliability
A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced. Superior immunity of reoxidized-nitrided-oxide to hot carrier degradation after plasma stress is also demonstrated.<>
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