{"title":"二次击穿条件下ESD保护器件的光子发射研究","authors":"H. Ishizuka, K. Okuyama, K. Kubota","doi":"10.1109/RELPHY.1994.307822","DOIUrl":null,"url":null,"abstract":"The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Photon emission study of ESD protection devices under second breakdown conditions\",\"authors\":\"H. Ishizuka, K. Okuyama, K. Kubota\",\"doi\":\"10.1109/RELPHY.1994.307822\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<<ETX>>\",\"PeriodicalId\":276224,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1994.307822\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1994.307822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photon emission study of ESD protection devices under second breakdown conditions
The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<>
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