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2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding 新型溅射膜沉积制备表面非常光滑的厚膜，适合于室温键合
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-11-27 DOI: 10.23919/LTB-3D.2019.8735262
T. Saito, H. Makita, T. Moriwaki, Y. Suzuki, N. Kato, S. Wakayanagi, A. Miura, M. Uomoto, T. Shimatsu
{"title":"Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding","authors":"T. Saito, H. Makita, T. Moriwaki, Y. Suzuki, N. Kato, S. Wakayanagi, A. Miura, M. Uomoto, T. Shimatsu","doi":"10.23919/LTB-3D.2019.8735262","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735262","url":null,"abstract":"SiO<inf>2</inf> films were deposited on glass wafers using energy treatment sputtering (ETS). Surface roughness S<inf>a</inf> of ETS-SiO<inf>2</inf> film was 0.17 nm, which is remarkably smaller than that of films deposited using conventional sputtering (Sa=0.46 nm). Bonding using the extremely smooth surface was demonstrated.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131073885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature 室温下Ar原子辐照对表面活化键合制备的GaAs/Si界面结晶度的影响
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735300
Y. Ohno, Reina Miyagawa, H. Yoshida, S. Takeda, Jianbo Liang, N. Shigekawa
{"title":"Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature","authors":"Y. Ohno, Reina Miyagawa, H. Yoshida, S. Takeda, Jianbo Liang, N. Shigekawa","doi":"10.23919/LTB-3D.2019.8735300","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735300","url":null,"abstract":"Arsenic (As) vacancies are introduced beneath the GaAs surfaces irradiated by Ar atoms for surface activation, while As interstitials are co-introduced at deeper regions. After 673 K annealing, As vacancies disappear by the recombination with As interstitials, via the migration of As interstitials.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124954330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible Sensors – Materials, Interfaces and Surfaces 柔性传感器。材料、接口和表面
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735302
M. Deen, Arif Ul Alam
{"title":"Flexible Sensors – Materials, Interfaces and Surfaces","authors":"M. Deen, Arif Ul Alam","doi":"10.23919/LTB-3D.2019.8735302","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735302","url":null,"abstract":"Flexible sensors are attractive candidates for smart sensing applications in healthcare and environment. They can be manufactured on cheap plastic or paper substrates using low-cost printing technologies. However, for these applications, the flexible sensor’s performance depends critically on the properties of the materials and the various interfaces and surface. In this presentation, we discuss our recent work on flexible sensors with a focus on their fabrication, structure, reliability and performance.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115971109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding 用表面活化键合法评价Al箔/AlN结的键合强度
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735417
Shota Horikawa, S. Morita, Jianbo Liang, Y. Kaneko, Y. Nishio, M. Matsubara, H. Asahi, N. Shigekawa
{"title":"Bonding strength evaluation of Al foil/AlN junctions by surface activated bonding","authors":"Shota Horikawa, S. Morita, Jianbo Liang, Y. Kaneko, Y. Nishio, M. Matsubara, H. Asahi, N. Shigekawa","doi":"10.23919/LTB-3D.2019.8735417","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735417","url":null,"abstract":"An Al foil/AlN junction is fabricated by bonding a 30-μm Al foil and a 650-μm AlN plate at room temperature and 473 K. Their bonding strength, which is measured by the 180° peel test, is estimated to be ~30 and ~60 N/m for junctions fabricated by the room-temperature and 473-K bonding, respectively.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126077875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Where is the Sweet Spot for Panel Level Packaging? 面板级封装的最佳点在哪里?
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735124
T. Braun, K. Becker, O. Hoelck, S. Voges, M. Woehrmann, L. Boettcher, M. Toepper, L. Stobbe, R. Aschenbrenner, M. Schneider-Ramelow, K. Lang
{"title":"Where is the Sweet Spot for Panel Level Packaging?","authors":"T. Braun, K. Becker, O. Hoelck, S. Voges, M. Woehrmann, L. Boettcher, M. Toepper, L. Stobbe, R. Aschenbrenner, M. Schneider-Ramelow, K. Lang","doi":"10.23919/LTB-3D.2019.8735124","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735124","url":null,"abstract":"Fan-out Wafer Level Packaging (FOWLP) is one of the latest packaging trends in microelectronics. Besides technology developments towards heterogeneous integration including multiple die packaging, passive component integration in package and redistribution layer or package-on-package approaches also larger rectangular substrates formats are targeted.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124855934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding 表面活化键合制备砷化镓同质界面的原子探针层析成像
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735167
Y. Shimizu, N. Ebisawa, Y. Ohno, Jianbo Liang, N. Shigekawa, K. Inoue, Y. Nagai
{"title":"Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding","authors":"Y. Shimizu, N. Ebisawa, Y. Ohno, Jianbo Liang, N. Shigekawa, K. Inoue, Y. Nagai","doi":"10.23919/LTB-3D.2019.8735167","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735167","url":null,"abstract":"Elemental distribution around GaAs homointerfaces fabricated by surface-activated bonding (SAB) is examined by atom probe tomography (APT). Our APT detected small amount of contaminants accidentally introduced on the SAB interfaces. We confirmed that As-deficient intermediate layer at the as-bonded interfaces was recovered by post-bonding annealing.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132602864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pre-bonding Characterization of SiCN Enabled Wafer Stacking SiCN晶圆堆叠的预键合特性
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735126
Lan Peng, Soon-Wook Kim, S. Iacovo, F. Inoue, J. de Vos, E. Sleeckx, Andy Miller, G. Beyer, E. Beyne
{"title":"Pre-bonding Characterization of SiCN Enabled Wafer Stacking","authors":"Lan Peng, Soon-Wook Kim, S. Iacovo, F. Inoue, J. de Vos, E. Sleeckx, Andy Miller, G. Beyer, E. Beyne","doi":"10.23919/LTB-3D.2019.8735126","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735126","url":null,"abstract":"We present recent study in pre-bonding characterizations for SiCN-to-SiCN wafer stacking. An alternative approach is evaluated to quantify surface hydroxyl density on SiCN after plasma activation by HfO2 deposition. In addition, in-depth analysis of plasma activation effects is employed prior to bonding by means of TEM. The characterization results complement the post-bonding behavior of SiCN dielectric which deviates from conventional SiO2-SiO2 bonding.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122723395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al2O3 Layer by Using O Ion Beam O离子束通过中间原子层沉积Al2O3层的室温GaN-Si键合
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735103
Xinhua Wang, Shengli Zhu, Binbin Jiao, Sen Huang, K. Wei, H. Yin, Jie Fan, Xinyu Liu
{"title":"Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al2O3 Layer by Using O Ion Beam","authors":"Xinhua Wang, Shengli Zhu, Binbin Jiao, Sen Huang, K. Wei, H. Yin, Jie Fan, Xinyu Liu","doi":"10.23919/LTB-3D.2019.8735103","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735103","url":null,"abstract":"A room temperature GaN-to-Si bonding was performed via an intermediate Atomic-Layer-Deposition Al2O3 layer by using O plasma. The ratio of bonded area of 80% was achieved for a 4-inch wafer. The bonded area was uniform without distinguishable cracks or voids, and can bear the cutting force from the wafer scriber.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116857807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Robustness and reliability achievements for direct hybrid bonding integration: a review 直接混合键合集成的鲁棒性和可靠性研究进展
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735353
S. Moreau, J. Jourdon, S. Lhostis, D. Bouchu, Y. Henrion, L. Arnaud, A. Jouve, V. Balan, F. Fournel, P. Lamontagne, S. Chéramy, L. Cioccio
{"title":"Robustness and reliability achievements for direct hybrid bonding integration: a review","authors":"S. Moreau, J. Jourdon, S. Lhostis, D. Bouchu, Y. Henrion, L. Arnaud, A. Jouve, V. Balan, F. Fournel, P. Lamontagne, S. Chéramy, L. Cioccio","doi":"10.23919/LTB-3D.2019.8735353","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735353","url":null,"abstract":"The paper reviews the robustness/reliability achievements and include previously published data related to the hybrid bonding module for W2W and D2W bonding techniques.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130112159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Micro-transfer-printing for heterogeneous integration 用于异质集成的微转移印花
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI: 10.23919/LTB-3D.2019.8735381
B. Corbett, Z. Li, K. Buehler, F. Naumann, U. Krieger, S. Wicht, C. Bower
{"title":"Micro-transfer-printing for heterogeneous integration","authors":"B. Corbett, Z. Li, K. Buehler, F. Naumann, U. Krieger, S. Wicht, C. Bower","doi":"10.23919/LTB-3D.2019.8735381","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735381","url":null,"abstract":"Micro-transfer-printing is a key enabling technology for the heterogeneous integration of different materials and devices. The technique is particularly applicable to photonics where a typical system requires diverse arrays of components.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123127412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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