新型溅射膜沉积制备表面非常光滑的厚膜，适合于室温键合

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-11-27 DOI:10.23919/LTB-3D.2019.8735262

T. Saito, H. Makita, T. Moriwaki, Y. Suzuki, N. Kato, S. Wakayanagi, A. Miura, M. Uomoto, T. Shimatsu

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引用次数: 1

摘要

采用能量处理溅射(ETS)技术在玻璃晶圆上沉积SiO2薄膜。ETS-SiO2薄膜的表面粗糙度Sa为0.17 nm，明显小于传统溅射法沉积的薄膜(Sa=0.46 nm)。证明了使用极其光滑的表面进行键合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding

SiO2 films were deposited on glass wafers using energy treatment sputtering (ETS). Surface roughness Sa of ETS-SiO2 film was 0.17 nm, which is remarkably smaller than that of films deposited using conventional sputtering (Sa=0.46 nm). Bonding using the extremely smooth surface was demonstrated.

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2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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