SiCN晶圆堆叠的预键合特性

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-21 DOI:10.23919/LTB-3D.2019.8735126

Lan Peng, Soon-Wook Kim, S. Iacovo, F. Inoue, J. de Vos, E. Sleeckx, Andy Miller, G. Beyer, E. Beyne

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引用次数: 1

摘要

本文介绍了sicn - sicn晶圆堆叠预键合表征的最新研究。评估了一种替代方法，以量化HfO2沉积等离子体活化后SiCN表面羟基密度。此外，在键合前利用透射电镜对等离子体活化效应进行了深入分析。表征结果补充了SiCN介电介质的键后行为，偏离了传统的SiO2-SiO2键合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pre-bonding Characterization of SiCN Enabled Wafer Stacking

We present recent study in pre-bonding characterizations for SiCN-to-SiCN wafer stacking. An alternative approach is evaluated to quantify surface hydroxyl density on SiCN after plasma activation by HfO2 deposition. In addition, in-depth analysis of plasma activation effects is employed prior to bonding by means of TEM. The characterization results complement the post-bonding behavior of SiCN dielectric which deviates from conventional SiO2-SiO2 bonding.

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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