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2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-01 DOI: 10.23919/ltb-3d.2019.8735285
{"title":"LTB-3D 2019 Sponsors","authors":"","doi":"10.23919/ltb-3d.2019.8735285","DOIUrl":"https://doi.org/10.23919/ltb-3d.2019.8735285","url":null,"abstract":"","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115052259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications 光学应用中原子扩散键合过程中使用氧化物衬底氧化钛薄膜
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-01 DOI: 10.23919/LTB-3D.2019.8735120
G. Yonezawa, Y. Sato, S. Abe, M. Uomoto, T. Shimatsu
{"title":"Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications","authors":"G. Yonezawa, Y. Sato, S. Abe, M. Uomoto, T. Shimatsu","doi":"10.23919/LTB-3D.2019.8735120","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735120","url":null,"abstract":"Structural analyses revealed Ti film thickness at the bonded interface as more than twice that of the original thickness, with enhanced Ti oxide formation with oxygen dissociated from oxide underlayers. This process provides an interface with 100% light transmittance.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121596878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding 原子层沉积插入Pt中间层在Cu-Cu准直接键合中的作用研究
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-05-01 DOI: 10.23919/LTB-3D.2019.8735244
Kosuke Yamada, H. Kuwae, T. Kamibayashi, S. Shoji, Wataru Momose, J. Mizuno
{"title":"Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding","authors":"Kosuke Yamada, H. Kuwae, T. Kamibayashi, S. Shoji, Wataru Momose, J. Mizuno","doi":"10.23919/LTB-3D.2019.8735244","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735244","url":null,"abstract":"Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133226467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Diamond/Cu Direct Bonding for Power Device Application 功率器件用金刚石/铜直接键合的制备
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2019-01-25 DOI: 10.23919/LTB-3D.2019.8735136
Shinji Kanda, Satoshi Masuya, M. Kasu, N. Shigekawa, Jianbo Liang
{"title":"Fabrication of Diamond/Cu Direct Bonding for Power Device Application","authors":"Shinji Kanda, Satoshi Masuya, M. Kasu, N. Shigekawa, Jianbo Liang","doi":"10.23919/LTB-3D.2019.8735136","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735136","url":null,"abstract":"Direct bonding of diamond and Cu is successfully fabricated by surface activated bonding method. An almost full contact area of diamond and Cu is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124950550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper 定向纳米孪晶铜直接键合铜，时间短，电性能优异
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.23919/LTB-3D.2019.8735201
K. Shie, J. Juang, Chih Chen
{"title":"Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper","authors":"K. Shie, J. Juang, Chih Chen","doi":"10.23919/LTB-3D.2019.8735201","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735201","url":null,"abstract":"In order to be compatible with semiconductor manufacturing, nanotwinned Cu microbumps were fabricated on 8” wafers. The pair of top and bottom dies were jointed through thermal compression bonding. After 1 min bonding time, the resistance could obtaine from all test structures, which indicates all the microbumps were bonded in the short time successfully.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132208377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low temperature polyimide-to-polyimide direct bonding 低温聚酰亚胺-聚酰亚胺直接键合
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.23919/LTB-3D.2019.8735216
Hong-Che Liu, Chih Chen
{"title":"Low temperature polyimide-to-polyimide direct bonding","authors":"Hong-Che Liu, Chih Chen","doi":"10.23919/LTB-3D.2019.8735216","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735216","url":null,"abstract":"In this study, two polyimide (PI) films were bonded at 250/300 °C for 60 min. A good bonding interface with few voids was observed. During the bonding process, the partial cured PI film still underwent cross-linking reaction, resulting the voids in bonding sample..","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127591766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low Temperature Cu-to-Cu Direct Bonding with thin gold capping on Highly -orientated Nanotwinned Cu Films 高取向纳米孪晶Cu薄膜上薄金盖低温Cu- Cu直接键合
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.23919/LTB-3D.2019.8735271
Fu-Chian Chen, Yu-Ting Wu, Chih Chen
{"title":"Low Temperature Cu-to-Cu Direct Bonding with thin gold capping on Highly -orientated Nanotwinned Cu Films","authors":"Fu-Chian Chen, Yu-Ting Wu, Chih Chen","doi":"10.23919/LTB-3D.2019.8735271","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735271","url":null,"abstract":"In this study, we capped gold on the surface of highly (111)- orientated nano-twin copper films. With the great diffusivity of (111) copper and the low activity in gold, we can achieve a lower bonding temperature.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133663165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package 低温Cu-Cu Gang键合用于RDL-First扇出面板级封装
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.23919/LTB-3D.2019.8735260
Kai-Ming Yang, T. Chou, C. Ko, Chen-Hao Lin, Yu-Hua Chen, T. Tseng, Wen‐Wei Wu, Kuan-Neng Chen
{"title":"Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package","authors":"Kai-Ming Yang, T. Chou, C. Ko, Chen-Hao Lin, Yu-Hua Chen, T. Tseng, Wen‐Wei Wu, Kuan-Neng Chen","doi":"10.23919/LTB-3D.2019.8735260","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735260","url":null,"abstract":"In this paper, low temperature (190-220°C) Cu-Cu gang bonding at a low vacuum pressure is demonstrated. The low temperature technologies can be applied to the RDL-first Fan-Out panel level package (FOPLP).","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130183744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low temperature Au-Au direct bonding with highly <111>-oriented Au films 高取向Au薄膜的低温Au-Au直接键合
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.23919/LTB-3D.2019.8735410
Wei-You Hsu, John A. Wu, Chih Chen
{"title":"Low temperature Au-Au direct bonding with highly <111>-oriented Au films","authors":"Wei-You Hsu, John A. Wu, Chih Chen","doi":"10.23919/LTB-3D.2019.8735410","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735410","url":null,"abstract":"In this study, a bonding process with highly <111> oriented nano-twined Au (nt-Au) was proposed. A less void bonding interface was observed and it reveals a good bonding quality for the bonded samples. In addition, the Au grains can grow across original interface. All of the above make we suggest Au-Au direct bonding have high strength and durable bonding structure.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117254615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature Cu-to-Cu direct bonding enabled by highly (111)- oriented and nanotwinned Cu 高(111)取向和纳米孪晶Cu实现了低温Cu- Cu直接键合
2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.23919/LTB-3D.2019.8735125
Chih Chen, J. Juang, S. Chang, K. Shie, Yu Jin Li, K. Tu
{"title":"Low-temperature Cu-to-Cu direct bonding enabled by highly (111)- oriented and nanotwinned Cu","authors":"Chih Chen, J. Juang, S. Chang, K. Shie, Yu Jin Li, K. Tu","doi":"10.23919/LTB-3D.2019.8735125","DOIUrl":"https://doi.org/10.23919/LTB-3D.2019.8735125","url":null,"abstract":"In this study, a low temperature diffusion bonding enabled by (111) highly oriented nanotwinned Cu (nt-Cu) was proposed. Two different bonding atmospheres, one is in low vacuum bonding, and another is in N2 bonding were carried out. Both of the two bonding atmospheres show good bonding interfaces after microstructure observation. For vacuum ambient, large-grained structure was found after 250°C for 90 min at 1 MPa in vacuum bonding. The size was as large as 40 μm in width and 10 μm in height. For non-vacuum conditions, the nt-Cu bumps can be bonded to nt-Cu films at the 250°C for 20 min under 40.6 MPa. Accordingly, it is believed that low temperature bonding in low vacuum or non-vacuum ambients can be accomplished by using highly (111)-oriented nt-Cu.","PeriodicalId":256720,"journal":{"name":"2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131443404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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