低温Cu-Cu Gang键合用于RDL-First扇出面板级封装

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI:10.23919/LTB-3D.2019.8735260

Kai-Ming Yang, T. Chou, C. Ko, Chen-Hao Lin, Yu-Hua Chen, T. Tseng, Wen‐Wei Wu, Kuan-Neng Chen

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引用次数: 2

摘要

在本文中，低温(190-220℃)Cu-Cu gang键合在低真空压力。低温技术可应用于RDL-first扇出面板级封装(FOPLP)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package

In this paper, low temperature (190-220°C) Cu-Cu gang bonding at a low vacuum pressure is demonstrated. The low temperature technologies can be applied to the RDL-first Fan-Out panel level package (FOPLP).

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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