定向纳米孪晶铜直接键合铜，时间短，电性能优异

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI:10.23919/LTB-3D.2019.8735201

K. Shie, J. Juang, Chih Chen

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引用次数: 1

摘要

为了与半导体制造兼容，纳米孪晶铜微凸点被制造在8”晶圆上。采用热压键合的方法对上下模具进行连接。在1 min的粘接时间后，所有的测试结构都可以获得电阻，这表明在短时间内所有的微凸起都粘接成功。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper

In order to be compatible with semiconductor manufacturing, nanotwinned Cu microbumps were fabricated on 8” wafers. The pair of top and bottom dies were jointed through thermal compression bonding. After 1 min bonding time, the resistance could obtaine from all test structures, which indicates all the microbumps were bonded in the short time successfully.

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来源期刊

2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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