Copper direct bonding with short time and excellent electrical property by <111>-oriented nano-twinned copper

Abstract

In order to be compatible with semiconductor manufacturing, nanotwinned Cu microbumps were fabricated on 8” wafers. The pair of top and bottom dies were jointed through thermal compression bonding. After 1 min bonding time, the resistance could obtaine from all test structures, which indicates all the microbumps were bonded in the short time successfully.